Osram Opto Semiconductors Gmbh

Jan-Philipp Ahl

Joachim Hertkorn

Alexander Frey

Lorenzo Zini

Tobias Meyer

Matthias Peter

Thomas Lehnhardt

Marcus Eichfelder

In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer () based on AlInGaN where 0&#x2266;x4&#x2266;0.40 and on average 0&#x3c;y4&#x2266;0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer () on the fourth barrier layer (), wherein the quantum well layer () is based on InGaN where 0.08&#x2266;y&#x2266;0.35, growing a first barrier layer () based on AlInGaN where 0&#x2266;x1&#x2266;0.40 and on average 0&#x3c;y1&#x2266;0.4 onto the quantum well layer (), wherein the In content decreases along the growth direction (z), growing a second barrier layer () based on GaN onto the first barrier layer (), and growing a third barrier layer () based on GaN onto the second barrier layer (), wherein the third barrier layer () is grown with the addition of Hgas.

Method for producing an active zone for an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Optoelectronic device and method for producing an optoelectronic device

In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlGaONon the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

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Wuppertal, Germany

Jan-Philipp Ahl