Quantum Technologies, Inc.

University of California

Elmos Semiconductor Se

Other

Thales

Universitaet Leipzig

Universitat Kassel

Technische Universitat Ilmenau

Synchrotron Soleil

Duotec Gmbh

Quantum Technologies Ug

Universitat Leipzig

Leibniz-institut Für Oberflächenmodifizierung E.v.

Jan Meijer

Bernd Burchard

Robert Staacke

Ivo Rangelow

Roger John

Thomas Schenkel

Thierry Debuisschert

Christian Larat

Deirdre Olynick

Arthur Rönisch

Loic Morvan

Peter J Schuck

Stefan Kubsky

Mayeul Chipaux

Mario Bähr

Andreas Stephan

Loic Toraille

Ulf Weidenmuller

Nils Meijer

Florian Neuhäuser

Pablo D Esquinazi

Johannes Heitmann

Sébastien Pezzagna

Stephan Rauschenbach

Daniel Spemann

Loïc Toraille

Ivo W Rangelow

Sèbastian Pezzagna

Jürgen W Gerlach

Bernd Rauschenbach

Peter Schuck

A sensor system includes a quantum dot including one or more paramagnetic centers. It comprises a control and evaluation device including a pump radiation source, a radiation receiver and which irradiates the quantum dot depending on a transmission signal. The quantum dot emits fluorescence radiation upon irradiation with the pump radiation, which depends on the magnetic flux density and/or on another physical parameter. The control and evaluation device generates an output signal including a measured value as a function of the fluorescence radiation. The control and evaluation device compensatingly readjusts the sensitivity of the quantum dot for the magnetic flux density and/or the other physical parameter by means of one or more compensation coils.

Methods and apparatuses for measuring magnetic flux density and other parameters by means of a plurality of NV centers, and applications thereof

A device () and a method for determining the magnetic flux density are disclosure which provide a simple and cost-effective sensor unit which still has a good usability. In particular, a correspondingly produced sensor is also very small and can be used in a mobile manner.

Method and device for determining a magnetic flux density and method for producing such a device

A method of addressing at least one qubit to be addressed in a set of two or more qubits includes exposing the qubit to be addressed to an electromagnetic field; and at a same time exposing another qubit of the set of two or more qubits to an electromagnetic counter field in such a way that the electromagnetic field has no effect on the other qubit or that the electromagnetic field has a different effect on the other qubit than on the qubit to be addressed. A device for performing the method includes the set of two or more qubits and electromagnetic sources for generating the electromagnetic field and electromagnetic counter field.

Method and device for addressing qubits, and method for producing the device

A quantum-technological, micro-electro-optical or micro-electronic or photonic system includes a planar substrate of a direct or indirect semiconductor material. The system includes a microelectronic circuit including at least one transistor or diode. The system further includes a micro-optical subdevice and one or more nanoparticles, having one or more color centers. The surface of the of the planar substrate has a portion of a solidified colloidal film which is firmly bonded to the surface of the substrate. The portion of the solidified colloidal film includes the one or more nanoparticles. The system further includes a light-emitting electro-optical component. The light-emitting electro-optical component interacts optically with the micro-optical subdevice. The light-emitting electro-optical component interacts electrically and/or optically with the electrical component through the micro-optical subdevice. The interaction between the light-emitting electro-optical component and the electrical component takes place with an involvement of the color center or a plurality of color centers.

Device and method for using diamond nanocrystals having NV color centers in CMOS circuits

A device includes a substrate including a first layer and a second layer. The first and second layers are positioned adjacent to each other and comprise a common boundary region extending from the first layer to the second layer. The first layer comprises graphite with a Bernal-crystal structure. The second layer comprises graphite with a rhombohedral crystal structure. The boundary region includes a border region having superconducting properties, namely; at a current density of 0 Ampere/mand a magnetic flux density of 0 Tesla exhibiting a critical temperature (T) which is higher than −195° C., and/or at a temperature below the critical temperature (T) and a current density of 0 Ampere/m, exhibiting a critical magnetic flux density (B) that is higher than 1 Tesla. The border region is coupled to an electric and/or a magnetic and/or an electromagnetic signal with a frequency greater than or equal to 0 Hertz.

Graphite superconductor and use thereof

A scalar magnetometer includes a sensor element, a circuit carrier, a pump radiation source, a radiation receiver and evaluation means. The pump radiation source emits pump radiation. The sensor element preferably includes one or more NV centers in diamond as paramagnetic centers. This paramagnetic center emits fluorescence radiation when irradiated with pump radiation. The radiation receiver converts a intensity signal of the fluorescence radiation into a receiver output signal. The evaluation means detects and/or stores and/or transmits the value of the receiver output signal. The material of the circuit carrier is preferably transparent for the pump radiation in the radiation path between pump radiation source and sensor element and transparent for the fluorescence radiation in the radiation path between sensor element and radiation receiver. The components sensor element, pump radiation source, radiation receiver and evaluation means are preferably mechanically attached to the circuit carrier.

NV center-based microwave-free galvanically isolated magnetometer

A sensor system is based on diamonds with a high density of NV centers. The description includes a) methods for producing the necessary diamonds of high NV center density, b) characteristics of such diamonds, c) sensing elements for utilizing the fluorescence radiation of such diamonds, d) sensing elements for utilizing the photocurrent of such diamonds, e) systems for evaluating these quantities, f) reduced noise systems for evaluating these systems, g) enclosures for using such systems in automatic placement equipment, g) methods for testing these systems, and h) a musical instrument as an example of an ultimate application of all these devices and methods.

NV-center-based microwave-free quantum sensor and uses and characteristics thereof

A device for generating and controlling a magnetic field strength and a method for generating and controlling a magnetic field strength are disclosed. The generation is very stable and precise. Preferably, reference values of physical variable can be generated relatively simply and economically. In addition, magnetic flux densities can be measured with high resolution and, in particular, highly robustly. The device and the method can also be used for transmitting information, in particular for ultra-wide band communication. The required devices can be very small, in particular miniature, and mobile.

Device and method for generating and controlling a magnetic field strength

A system for analyzing a microwave-frequency signal by imaging is provided, comprising:

System for analysis of a microwave frequency signal by imaging

The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

Device and method for an atomic force microscope for the study and modification of surface properties

The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 &#x3bc;m to about 200 &#x3bc;m and apertures in the shadow mask have lateral dimensions from about 0.5 &#x3bc;m to about 3 &#x3bc;m.

Shadow mask and method for producing a shadow mask

A device and a method for positionally accurate implantation of individual particles in a substrate surface () are described. A diaphragm for a particle beam to be directed onto the substrate surface () and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface () are provided on a tip () which is formed on a free end portion of a flexible arm () to be mounted on one side. The device is part of a scanning device operating according to the AFM method.

Device and method of positionally accurate implantation of individual particles in a substrate surface

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Bochum, Germany

Jan Meijer