Solarworld Industries Thueringen Gmbh

Solarworld Industries Thüringen Gmbh

Jan Lossen

Hans-Joachim Krokoszinski

A method for producing monocrystalline n-silicon solar cells having a rear-side passivated pemitter and rear-side, spatially separate heavily doped n-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p-emitter regions and the n-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.

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Erfurt, Germany

Jan Lossen