Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Jan-Laurens Pieter Jacobus Van Der Steen

Gerwin Hermanus Gelinck

Paul Louis Maria Joseph Van Neer

Auke Jisk Kronemeijer

Henry Simon Dol

Koen Cornelis Hubertus Blom

Mark Kevan Prior

Laurens Christiaan Johannes Maria Peters

Roy Gerardus Franciscus Verbeek

Gerwin Hermanus Gelink

A communication system () comprising a first and a second underwater wearable device to be worn by a swimmer at mutually distant locations is disclosed herein. The communication system is configured to derive information pertaining to the swimmer from properties of a version of the acoustic signal transmitted from a first communication module of the first underwater wearable device to a second communication module of the second underwater wearable device.

Underwater wearable device, communication system comprising the same and communication method

A photodetector array () is provided comprising a plurality of pixels () between a supply line () and a common electrode (). Respective pixels () comprise a photon radiation sensitive element () arranged in a series connection with a switching element () characterized in that the series connection further includes a resistive element ().

Photodetector array and method of manufacturing the same, as well as an imaging device including the photodetector array

A high voltage thin-film transistor is specified comprising a gate electrode (G, G) in a gate electrode layer (), a semiconductive channel (C,C) in a channel layer () parallel to the gate electrode layer and being electrically insulated from the gate electrode by a gate dielectric layer (). The transistor further comprises a dominant main electrode and a subordinate main electrode (M, M). The main electrodes each have an external portion (M, M) in a main electrode layer () and an internal portion (M, M) that protrudes through a further dielectric layer () between the main electrode layer and the channel layer to electrically contact the semiconductive channel in a dominant main electrode contact area (M) and a subordinate main electrode contact area (M) respectively. A first distance (D) is defined between a side of the dominant main electrode contact area facing the subordinate main electrode contact area and a side of the external portion of the dominant main electrode facing the external portion of the subordinate main electrode. A second distance (D) is defined between a side of the subordinate main electrode contact area facing the dominant main electrode contact area and a side of the external portion of the subordinate main electrode facing the external portion of the dominant main electrode, wherein the first distance is at least twice as large as the second distance.

High voltage thin-film transistor and method of manufacturing the same

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Zaltbommel, Netherlands

Jan-Laurens Pieter Jacobus Van Der Steen