Analog Devices International Unlimited Company

Analog Devices Global

Analog Devices Global Unlimited Company

Analog Devices,inc.

University College Cork

Jan Kubik

Jochen Schmitt

Robert Guyol

Alan J O'Donnell

Eoin Edward English

Javier Calpe Maravilla

Maria Jose Martinez

Padraig Fitzgerald

Peter James Tonge

Monsoon Dutt

Michael P Lynch

Michael Noel Morrissey

Bernard Patrick Stenson

Enno Lage

John O'Dowd

Stephen O'Brien

Enda Joseph Nicholl

Aude Richard

Brian O'Mara

Wenmei Wang

Michael Mueller-Aulmann

Onur Necdet Urs

Colin P Giles

Christian Nau

Baoxing Chen

Patrick Martin McGuinness

Paul Martin Lambkin

Shane Patrick Geary

Seamus Paul Whiston

Sombel Diaham

Matthew Thomas Canty

Catriona Marie O'Sullivan

Shane Geary

Krystian Balicki

John G Shanahan

Yi Yuan

Cian Padraic O Dalaigh

Md Tarequzzaman

Fernando Franco

Padraig Michael Doran

Patrick Mcguinness

A magnetic sensor package comprising a magnetic multi-turn sensor die and a magnetic single turn sensor die, in which both sensor dies are packaged on the same lead frame. A method of manufacturing the magnetic sensor package is also provided. A magnetic sensor system comprising a rotating magnet and the magnetic sensor package, where the sensor package is arranged so that both sensor dies sit within a homogenous magnetic field, thereby ensuring that the output signal of each sensor is not corrupted by any stray fields.

Magnetic sensor package and magnetic sensing system

The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors. Techniques, e.g., lithography techniques, are described to form crossings so that a distortion of an ideal shape is reduced or minimized. Another aspect describes techniques to modify the material thickness and/or magnetic properties in such an area of the crossing. Yet another aspect describes techniques to locally weaken the applied field in the area of the crossing to prevent nucleation events in this area. The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors.

Magnetic multi-turn sensor structures and fabrication

A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Methods for tunnel magnetoresistance multi-turn sensor manufacture and read-out

The disclosed technology generally relates to lithographically defined conductive lines for integrated circuit devices formed by plating, and more particularly to conductive lines shaped to reduce the magnitude of electric field in the electric field distributions around conductive lines of integrated and monolithic transformers and isolators.

Shaped metal edge for galvanic or capacitive isolator

A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape anisotropy without exhibiting an AMR effect. To achieve this, at least a portion of the free layer comprises a plurality of layers of at least two different materials, specifically, a plurality of layers of at least a first material that is ferromagnetic and a plurality of layers of at least a second material that is known not to exhibit an AMR effect and that does not interfere with the GMR effect of the layers of ferromagnetic material.

Magnetoresistive element with free-layer and method of manufacturing same

Apparatus and methods provide sensing of quadrants, angles, or distance using magnetoresistive elements. A quadrant or angle sensor can have magnetoresistive elements split into multiple angles to generate an output with reduced harmonics. A distance sensor can have magnetoresistive elements split and spaced apart to generate an output with reduced harmonics. A biasing conductor can alternatingly carry different amounts of current (different in at least one of magnitude or direction) for DC offset compensation or cancellation.

Length detector with magnetoresitive elements

The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Plated metallization structures

Magnetic sensor package

The present disclosure provides a method of monitoring the magnetic field in which a magnetic sensor is operating in to ensure that the sensor is operating within its defined magnetic window. For example, the method uses the sensor output of either a multi-turn sensor, or some other magnetoresistive sensor that is being used in conjunction with the multi-turn sensor, for example, a magnetic single turn sensor or a second multi-turn sensor, to monitor the operating magnetic field.

Method of monitoring a magnetic sensor

A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

Devices, systems and methods including magnetic structures and micromechanical structure

Techniques for fabricating low-loss magnetic vias within a magnetic core are provided. According to some embodiments, vias with small, well-defined sizes may be fabricated without reliance on precise alignment of layers. According to some embodiments, a magnetic core including a low-loss magnetic via can be wrapped around conductive coils of an inductor. The low-loss magnetic vias can improve performance of an inductive component by improving the quality factor relative to higher loss magnetic vias.

Via for magnetic core of inductive component

Magnetic field detector

Offset compensation for magnetic field detector

Magnetic device with magnetic structure and micro-fluidic structure

Growing community of inventors

Raheen, Ireland

Jan Kubik