Flexenable Limited

Flexenable Technology Limited

Cambridge Display Technology Limited

Cambridge Enterprise Limited

Otb Group B.v.

Jan Jongman

Shane Norval

Jonathan Huggins

Francesca Bottacchi

Brian Asplin

Joffrey Dury

Henning Sirringhaus

Euan Christopher Smith

Stephan Riedel

Franciscus Cornelius Dings

Jens Dienelt

Faisal Qureshi

Patrick Too

Martin Lewis

Mark Nikolka

Karsten Neumann

Anja Wellner

Iyad Nasrallah

Daniel Garden

Remco Leonardus Johannes Robertus Pennings

Paul Jerram

Stephen Coats

John Altrip

David Lacey

A display device including a liquid crystal cell having liquid crystal material contained between a control component having at least an organic semiconductor layer supported on a first support film, and a counter component having a second support film. The device further includes a first polarising filter component on the opposite side of the control component to the liquid crystal material and a second polarising filter component on the opposite side of the counter component to the liquid crystal material. The device also includes one or more oxygen-permeable, self-supportable films having a total thickness of at least 185 microns between the first polarising filter component and the control component and/or between the second polarising filter component and the counter component.

Liquid crystal display devices

A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

Semiconductor devices

A technique comprising: providing on an outer side of a support film of a liquid crystal cell one or more first components having an oxygen transmission rate (OTR) at least 100,000 times lower than said support film of the liquid crystal cell; wherein the method further comprises interposing a preprepared oxygen-permeable adhesive film between said support film of the liquid crystal cell and an innermost one of said one or more first components; wherein the pre-prepared oxygen-permeable adhesive film has a thickness greater than another adhesive film provided on said outer side of said support film outside of said innermost one of said one or more first components.

A device including a stack of layers defining a first conductor pattern at a first level of the stack and one or more semiconductor channels in respective regions, connecting a pair of parts of the first conductor pattern, and capacitively coupled via a dielectric to a coupling conductor of a second conductor pattern at a second level of the stack. The stack includes at least two insulator patterns over which the first level or second level conductor patterns is formed. A first insulator pattern occupies one or more semiconductor channel regions to provide the dielectric. The second insulator pattern defines one or more windows in the one or more semiconductor channel regions through which the second conductor pattern contacts the first insulator pattern other than via the second insulator pattern. The second insulator pattern overlaps the first insulator pattern outside the one or more semiconductor channel regions.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A technique comprising: forming an insulator over a first conductor pattern; patterning the insulator to form an insulator pattern which exposes the first conductor pattern in one or more via regions; forming a second conductor pattern over the insulator pattern, which second conductor pattern contacts said first conductor pattern in said one or more via regions; creating a more even topographic profile in said one or more via regions, with the second conductor pattern exposed outside the one or more via regions; forming a semiconductor () over the second conductor pattern for charge carrier transfer between the second conductor pattern and the semiconductor; and depositing a third conductor () over the semiconductor, for charge carrier transfer between the third conductor () and the semiconductor ().

Photodetector device including a photoactive semiconductor over a conductor pattern and method of making the same

An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.

Organic electronic/optoelectronic devices

A technique comprising: providing a stack of layers defining at least (a) source and drain electrodes, (b) gate electrode, and (c) semiconductor channel of at least one transistor; depositing one or more organic insulating layers over the stack; removing at least part of the stack in one or more selected regions by an ablation technique; depositing conductor material over the stack in at least the one or more ablated regions and one or more border regions immediately surrounding a respective ablated region; and depositing inorganic insulating material over the stack at least in the ablated regions and the border regions to cover the ablated regions and make direct contact with said conductor material in said one or more border regions all around the respective ablated region.

Protecting transistor elements against degrading species

A transistor device comprising: source and drain conductors connected by a semiconductor channel; and a gate conductor capacitively coupled to the semiconductor channel via a gate dielectric; wherein the gate conductor comprises at least one portion overlapping at least part of at least one of said source and drain conductors; and further comprising a patterned insulator interposed between at least part of said at least one of the source and drain conductors and said at least one overlapping portion of said gate conductor so as to reduce capacitive coupling between the said at least one of the source and drain conductors and the gate conductor by more than any reduction in capacitive coupling between the semiconductor channel and the gate conductor.

Reducing undesirable capacitive coupling in transistor devices

An electronic switching device array encapsulated in an encapsulating structure; wherein said array is exposed to one or more gas pockets between said array and said encapsulating structure.

Encapsulated arrays of electronic switching devices

An organic electroluminescent device comprising: a transparent substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light-emitting layer disposed between the first and the second electrode, wherein the second electrode is reflective, the first electrode is transparent or semi-transparent, and one or more intermediate layers of dielectric material with a refractive index greater than 1.8 or a metal material is disposed between the substrate and the first electrode forming a semi-transparent mirror whereby a microcavity is provided between the reflective second electrode and the semi-transparent mirror, all the intermediate layers disposed between the substrate and the first electrode having a surface nearest the organic light-emitting layer not more than 150 nm from a surface of the first electrode nearest the organic light-emitting layer.

Organic electroluminescent device

Method for manufacturing an organic light emitting device or a blank for forming therefrom an organic light emitting device as well as such a OLED or blank, the organic light emitting device having a light emitting area with two opposite first sides and two opposite second sides, the method comprising at least the following steps: providing a substrate; depositing and partly removing a layer of transparent conductive material on the substrate for forming parallel anode lines which extend between the first sides; depositing and partly removing at least one conductive layer for forming contacts which are connected anode lines; wherein a photoresist layer is deposited so that it fully extends over contacts adjacent the at least one second side except for at least one contact position per cathode line, via which an electric contact between a respective cathode line to be formed and a respective contact is established.

Method for manufacturing an OLED or a blank for forming an OLED as well as such a blank or OLED

A light-emitting device comprising: a first electroluminescent element for emitting light of a first colour when energised; and a second electroluminescent element for emitting light of a second colour when energised, the first electroluminescent element having an active lifetime which is greater than that of the second electroluminescent element; characterised in that the second element is configured to operate at a lower brightness than the first element.

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Cambridge, United Kingdom

Jan Jongman