Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Jan Johannes Van Den Broek

Andreas Hubertus Montree

Arjen Boogaard

Willem Reindert De Wild

Johannes Nicolaas Huiberts

Martinus Hermanus Wilhelmus Maria Van Delden

Coen Theodorus Hubertus Fransiscus Liedenbaum

Roel Van Woudenberg

Johannes Cornelis Norbertus Rijpers

Anton Heger

Richard Antonius Fransiscus Van Der Rijt

Coen Theodorus Hubertus Franciscus Liedenbaum

Richard A Van Der Rijt

Hermanus Henricus Josephus Wilting

The optical data storage medium () has a substrate () with a surface area having tracks () of marks representing stored information. The information is readable by means of a scanning radiation beam (). A reflective layer () is present, reflecting the radiation beam (). The medium has a radiation beam () reflection larger than 50%. The reflective layer () comprises a compound of the formula Al,X, in which formula Al is aluminum and X is an element selected from the group of Ge and Si. The letter y is the atomic fraction of X in at. %. The value of y is in the range 5&#x3c;y&#x3c;35. The reflective layer () has a radiation beam absorption, which enables controlled ablative recording or solid-phase change recording of an identification mark (').

Optical data storage medium and use of such a medium

The electronic device ( ) has a layer ( ) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material to above a crystallization temperature, for example with a laser. As a result, the layer ( ) has a first electrically conducting areas ( ), comprising the material in the crystalline state, which are insulated from each other by the first electrically insulating area ( ), comprising the material in the amorphous state. The layer ( ) may be present as an interconnect layer, but also as a covering layer. Preferably, the material is aluminum-germanium. In the method of patterning a layer ( ), electrically conductive areas of the layer can be strengthened by electroplating.

Electronic device, and method of patterning a first layer

Passive component

A description is given of a precision resistor. The resistor comprises a substrate having two connections which are electrically interconnected via a resistance path, said resistance path comprising a first path portion having a positive TCR and a second path portion having a negative TCR. The resistor is characterized in that the resistance material of both path portions is selected so that the resistance values and the absolute TCRs of both path portions are comparable and in that both path portions are trimmed so that the resistor has desired resistance and TCR values. Preferably, the resistance materials used for the path portions consist of an alloy of substantially the same composition on the basis of CuNi or NiCrAl. The invention makes it possible to very accurately and reproducibly mass-produce precision resistors.

Electric resistor having positive and negative TCR portions

A metal alloy having an intrinsically low TCR, and which preferably comprises a metal oxide and forms part of the resistance material in a quantity of 15-60 vol. %. The best results are achieved with a resistance material which comprises an alloy of CuNi as the metal alloy and SiO.sub.2 as the high-ohmic component. The resistors exhibit a relatively high resistance value as well as a relatively low TCR value.

Thin-film resistor and resistance material for a thin-film resistor

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Eindhoven, Netherlands

Jan Johannes Van Den Broek