National Research Council of Canada

Other

Riken Corporation

Jan J Dubowski

Ye Tao

Katsumi Midorikawa

Christophe Py

Koji Sugioka

Elnaz Nazemi

Toshimitsu Akane

Srivatsa Aithal

Xiaohuan Huang

A photo-electrochemical bio-sensor uses a semiconductor heterostructure located in an etching solution. An outer layer of the heterostructure is functionalized, such as with a self-assembled monolayer, to provide adherence of a charged molecule of interest. When contacted by a test solution, the functionalization immobilizes a quantity of the molecule that corresponds to its concentration in the test solution. The heterostructure undergoes photocorrosion when illuminated by a laser at a rate corresponding to the quantity of immobilized charged molecules. The rate of photocorrosion is monitored to determine the concentration of the molecule in the test solution. The monitoring may make use of a photoluminescent material in the heterostructure that emits photoluminescence in response to the laser illumination. The photoluminescence changes with the advancement of the photocorrosion, and the change is therefore indicative of the concentration of the molecule in the test solution.

Photo-electrochemical biosensor and semiconductor heterostructure-based sensing method

Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favorable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.

Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures

To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

Laser-induced bandgap shifting for photonic device integration

A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Process for formation of cap layer for semiconductor

Growing community of inventors

Ottawa, Canada

Jan J Dubowski