Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Jan-Frederik Nekarda

Andreas Grohe

Oliver Schultz-Wittmann

Daniel Biro

Ralf Preu

Andreas Wolf

Jochen Rentsch

Marc Hofmann

A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Method for local contacting and local doping of a semiconductor layer

The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.

Method for metallizing semiconductor elements and use thereof

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Freiburg im Breisgau, Germany

Jan-Frederik Nekarda