Asml Netherlands B.v.

Jan Evert Van Der Werf

Erik Roelof Loopstra

Hans Van Der Laan

Mark Kroon

Johannes Hubertus Josephina Moors

Jacobus Hermanus Maria Neijzen

Rene Monshouwer

Vadim Yevgenyevich Banine

Levinus Pieter Bakker

Frank Jeroen Pieter Schuurmans

Wilhelmus Cornelis Keur

Martinus Hendrikus Antonius Leenders

Ralph Kurt

Haico Victor Kok

Hans Meiling

George Arie Jan Fockert

Arie Jeffrey Den Boef

Bernardus Hendrikus Wilhelmus Hendriks

Joost Jeroen Ottens

Aleksey Yurievich Kolesnychenko

Wilhelmus Josephus Box

Cristian Nicolae Presura

Jan Van Elp

Cristian-Nicolae Presura

Auke Jan Mud

Johannes H J Moors

A device manufacturing method is disclosed. The method includes patterning a beam of radiation, projecting the patterned beam of radiation onto a plurality of outer target portions of a substrate in a sequence in which each subsequent outer target portion is spaced-apart from a preceding outer target portion, and subsequent to projecting the patterned beam of radiation on the plurality of outer target portions, projecting the patterned beam of radiation onto an inner target portion of the substrate.

Device manufacturing method, lithographic apparatus and device manufactured thereby

A reflector alignment system uses an alignment beam propagating through a projection system that includes a mirror group to measure the apparent relative positions of two reference marks fixed to a reference frame on opposite sides of the projection system. Any movement of mirrors in the projection system will be detected as a shift in the apparent position of the reference marks.

Lithographic apparatus and device manufacturing method

A holographic mask includes a plurality of pixels each imparting a calculated phase and/or amplitude change to the projection beam to provide an image that is parallel to the mask. The holographic mask is used displaced from the best object plane of the projection lens.

Holographic mask for lithographic apparatus and device manufacturing method

A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.

Device manufacturing method, device manufactured thereby and a mask for use in the method

A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &#x3bb;into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.

Lithographic apparatus, device manufacturing method, and device manufactured thereby

An inspection apparatus is disclosed having an radiation system configured to provide an radiation beam, a beamnsplitter configured to create, from the radiation beam, a first illumination beam and a second illumination beam directed to a planar reference part of a sample and a patterned part of the sample, respectively, and a beam detector configured to detect a detection beam, the detection beam comprising a recombination of radiation scattered from the planar reference part and the patterned part.

Apparatus and method for inspecting a patterned part of a sample

A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.

Lithographic apparatus, device manufacturing method and radiation system

A method of detecting mask defects in which a reference substrate is patterned by the mask immediately after manufacture of the mask is disclosed. The reference substrate is stored in clean conditions while IC manufacture takes place. When a mask defect is suspected, a resist coated substrate, the test substrate, is patterned by exposure of the mask. The patterns on the reference substrate and the test substrate are compared to determine if there is a mask defect. The location of the mask defect can be found by scanning smaller areas of the patterns.

Method of detecting mask defects, a computer program and reference substrate

A marker structure on a substrate includes line elements and trench elements, the line elements and trench elements each having a length in a first direction and being arranged in an alternating repetitive sequence in a second direction perpendicular to the first direction, the alternating repetitive sequence having a sequence length, the marker structure having at least one pitch value, the at least one pitch value being the sum of a line width of one line element and a trench width of one trench element. A width of the line elements varies over the sequence length of the marker structure between a minimum line width value and a maximum line width value, while a width of the trench elements likewise varies over the sequence length of the marker structure between a minimum trench width value and a maximum trench width value. A duty cycle of a pair of a line element and an adjacent trench element is substantially constant over the sequence length of the marker structure. Thus, the pitch value varies from a minimum pitch value to a maximum pitch value over the sequence length.

Alignment system and lithographic apparatus equipped with such an alignment system

In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.

Method of measuring overlay

For determining the alignment of a substrate with respect to a mask, a substrate alignment mark, having a periodic structure, and an additional alignment mark, having a periodic structure and provided in a resist layer on top of the substrate, are used. Upon illumination of these two marks, having a period which is considerably smaller than that of a reference mark, an interference pattern is generated, which has a period corresponding to that of the reference mark. By measuring the movement of the interference pattern with respect to the refernce mark, the much smaller mutual movement of the fine alignment marks can be measured. In this way, the resolution and accuracy of a conventional alignment device can be increased considerably.

Method of measuring alignment of a substrate with respect to a reference alignment mark

A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength &#x3bb;smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &#x3bb;into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.

Liquid is supplied to a space between a projection system of a lithographic apparatus and a substrate, but there is a space between the liquid and the substrate. An evanescent field may be formed between the liquid and the substrate allowing some photons to expose the substrate. Due to the refractive index of the liquid, the resolution of the system may be improved and liquid on the substrate may be avoided.

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Waalre, Netherlands

Jan Evert Van Der Werf