Qimonda Ag

Qimonda North America Corporation

Infineon Technologies Ag

International Business Machines Corporation

Macronix International Co., Ltd.

Diehl Aviation Gilching Gmbh

Saint-gobain Glass France

Apparatebau Gauting Gmbh

Bengbu Design & Research Institute for Glass Industry

Jan Boris Philipp

Thomas Happ

Thomas Nirschl

Hsiang-Lan Lung

Chung H Lam

Matthew Joseph Breitwisch

Eric Andrew Joseph

Yi-Chou Chen

Ulrike Gruening-von Schwerin

Shih Hung Chen

Petra Majewski

Alejandro Gabriel Schrott

Ming-Hsiu Lee

Simone Raoux

Chieh-Fang Chen

Ming-Hsiang Hsueh

Bernhard Ruf

Chia Hua Ho

Christian Rüster

Stephen Mark Rossnagel

Franz Kreupl

Geoffrey W Burr

Hsiang Lan Lung

Shoaib Hasan Zaidi

Yi Chou Chen

Chieh Fang Chen

Dieter Andres

Karl Albrecht Hopfe

Renate Bergmann

Ingo Zerbes

Alexander Jahn

Ulrike Gruening-Von Schwerin

An apparatus for inerting a space includes a metal-air battery, a feed channel for the introduction of air from an air source to the metal-air battery, and a discharge channel for the discharge of air from the metal-air battery to a volume of the space. A control unit controls an electrochemical reaction of the metal-air battery as a function of a fire situation within the space. A method for inerting a space, an inerting system, an inerting method and an aircraft or spacecraft are also provided.

Apparatus and method for inerting a space

In a method for determining a filling level (F) of waste water () in a tank () of a vehicle (), wherein a respective flushing quantity (P) of waste water () is fed to the tank () by means of flushing processes, a binary filling signal (L-) (waste water () present or not) is determined at at least two measuring positions (-) at the tank () with known filling quantities (M-), the filling level (F) is determined as a sum of a basic filling quantity (B) and an inflow quantity (Z), wherein the basic filling quantity (B) is selected as zero or as the greatest filling quantities (M-) of active filling signals (L-) at a starting time (A), and the inflow quantity (Z) is determined as a sum of all the fed-in flushing quantities (P) from the starting time (A). A measuring arrangement () for determining the filling level (F) contains an evaluation module () with an interface () for the flushing signals (S), and at least two sensors (-) for the filling signals (L-), wherein the evaluation module () is designed to determine the filling level (F) according to the method according to the invention. A waste water arrangement () with the tank () and at least one flushing device () contains a measuring arrangement () according to the invention.

Determining a waste water filling level in a vehicle tank, measuring arrangement and waste water arrangement

A method for operating a cooling unit on board an aircraft includes operating the cooling unit in a cooling mode and in a thawing mode. In the thawing mode, any thawed water in the cooling unit is drained off from a thawing element with the aid of gravitational force, and the thawing mode is prevented during specifiable flight phases and/or flight attitudes of the aircraft. A cooling unit configuration for an aircraft includes a cooling unit to be mounted on board an aircraft. The cooling unit can be operated in a cooling mode and in a thawing mode. The cooling unit has an element that thaws in the thawing mode, from which any thawed water can be drained off with the aid of gravitational force. A control device is configured to prevent the thawing mode during specifiable flight phases and/or flight attitudes of the aircraft.

Method for operating a cooling unit and cooling unit configuration for an aircraft

A smoke alarm has a housing with a heating device for heating walls of the housing to a temperature above the dew point. The heating device has at least one heating light emitting diode (LED). The heating LED has an opening angle for the emission of light, which opening angle leads to an irradiated area of the housing.

Heatable smoke alarm

A frameless solar module having a carrier substrate and a top layer connected thereto, between which there is a layer structure which forms a plurality of solar cells connected in series for the photovoltaic generation of power is described. The carrier substrate and/or the top layer of the frameless solar module is/are provided with mounting holes for mounting the solar module on a module bracket or for connection to at least one further solar module. The mounting holes are produced in a coating-free zone within a photovoltaically active region. Mounting arrangements having such a solar module which contain fixing elements which pass through the mounting holes are also described. Furthermore, a method for producing such a solar module in which the mounting holes are produced in the carrier substrate and/or in the top layer is also described.

Frameless solar module with mounting holes

Solar module arrays are described, including a solar module for photovoltaic energy generation, a connection housing connected to the solar module for connecting the solar module to an electric load, and a free-wheeling diode connected antiparallel to the solar module. A diode cable is also described.

Solar module arrays and diode cable

A memory cell includes a first electrode, a second electrode, a layer of phase change material extending from a first contact with the first electrode to a second contact with the second electrode, and a sidewall spacer contacting the second electrode and a sidewall of the layer of phase change material adjacent to the second contact.

Integrated circuit including sidewall spacer

An integrated circuit includes a first SONOS memory cell and a second SONOS memory cell. The second memory cell is stacked on the first memory cell.

Stacked SONOS memory

An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

Resistive memory devices with improved resistive changing elements

A memory includes a first vertical bipolar select device including a first base and a first emitter, a first phase change element coupled to the first emitter, a second vertical bipolar select device including a second base and a second emitter, a second phase change element coupled to the second emitter, and a buried word line contacting the first base and the second base.

Memory including vertical bipolar select device and resistive memory element

An integrated circuit includes an array of resistance changing memory cells, and a circuit configured to apply an initialization signal to a first one of the memory cells that is in a virgin resistance state. The initialization signal is configured to modify the first memory cell without switching an operation state of the first memory cell.

Integrated circuit with an array of resistance changing memory cells

According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.

Data exchange in resistance changing memory for improved endurance

An integrated circuit includes a first bit line and a resistance changing memory element coupled to the first bit line. The integrated circuit includes a second bit line and a heater coupled to the second bit line. The integrated circuit includes an access device coupled to the resistance changing memory element and the heater.

Resistive memory cell accessed using two bit lines

A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.

Method for manufacturing a phase change memory device with pillar bottom electrode

A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.

Growing community of inventors

Peekskill, NY, United States of America

Jan Boris Philipp