Novaled Ag

Novaled Gmbh

Other

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Jan Blochwitz-Nimoth

Martin Pfeiffer

Ansgar Werner

Gildas Sorin

Karl Leo

Jan Birnstock

Carsten Rothe

Josef Salbeck

Hagen Klauk

Michael Hofmann

Horst Hartmann

Olaf Zeika

Andrea Lux

Sascha Dorok

Ulrich Heggemann

Kentaro Harada

Frederik Ante

Steffen Runge

Tobias Canzler

Hans Kleemann

Gregor Schwartz

Sven Murano

Kay Lederer

Rudolf Lessmann

Axel Fischer

Gufeng He

Xiang Zhou

Felix Limberg

Hartmut Krüger

Michele Sessolo

Sylvia Nicht

Björn Lüssem

Dashan Qin

Maria Cristina Momblona Rincon

Lidon Gil Escrig

Jan Hendrik Bolink

The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol, Pol, Poland Polare independently selected chains of the charge-transporting polymer, bb) X, X, X, and Xare independently selected optional spacer units or, independently, represent direct bonding of Pol, Pol, Poland Polchains to the cyclobutenone ring, cc) Z, Z, Z, and Zare independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z, Z, Z, and Zare independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.

Charge transporting semi-conducting material and electronic device comprising it

The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode () on a substrate (), generating a source-drain insulator () assigned at least partially to the substrate () and/or at least partially to the first electrode (), generating a second electrode () assigned to the source-drain insulator (), depositing an organic semiconducting layer () on the first electrode (), the second electrode (), and the source-drain insulator (), generating a gate insulator () assigned to the organic semiconducting layer (), and providing a gate electrode () assigned to the gate insulator (). Further, the invention relates to an organic transistor.

Method for producing an organic transistor and organic transistor

Electronic and optoelectronic devices are provided that may include at least one inorganic surface covered at least partly by an organic layer. The organic layer may include a compound having at least one anchor group anchoring the compound to the inorganic surface, at least one functional moiety, and at least one methylidenyl group. Compounds and methods for manufacturing electronic and optoelectronic devices also are provided.

Electronic or optoelectronic device comprising an anchored thin molecular layer, process for its preparation and compound used therein

The present invention relates to the use of heterocyclic compounds as the charge transport material, blocker material or light-scattering material in electronic, optoelectronic or electroluminescent components.

Heterocyclic compounds and the use thereof in electronic and optoelectronic components

The invention relates to a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region, wherein, in the light-emitting region, one light-emitting layer is made up of a material (M) and another light-emitting layer is made up of another material (M), where the material (M) is ambipolar and preferentially transports holes and the other material (M) is ambipolar and preferentially transports electrons; a heterotransition is formed by the material (M) and the other material (M) in the light-emitting region; an interface between the material (M) and the other material (M) is of the staggered type II; the material (M) and the other material (M) each contain an appropriate addition of one or more triplet emitter dopants; and an energy barrier for transfer of holes from the material (M) into the other material (M) and an energy barrier for transfer of electrons from the other material (M) into the material (M) are each less than about 0.4 eV.

Layer assembly for a light-emitting component

The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc(ferrocene/ferrocenium redox couple) of maximum approx. &#x2212;1.5 V, if the low-molecular layer is arranged adjacent to the cathode contact, and as acceptor molecules with a reduction potential versus Fc/Fc(ferrocene/ferrocenium redox couple) of minimum approx. &#x2212;0.3 V if the low-molecular layer is arranged adjacent to the anode contact.

Light-emitting component

The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Method for producing an electronic device with a layer structure and an electronic device

A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.

Light-emitting component and process for its preparation

The invention relates to an arrangement for an organic pin-type light-emitting diode with an electrode and a counter-electrode and a stack with organic layers between the electrode and the counter-electrode, where the stack with the organic layers comprises an emission layer comprising a k (k=1, 2, 3, . . . ) organic matrix materials, a doped charge carrier transport layer, which is arranged between the electrode and the emission layer, a further doped charge carrier transport layer, which is arranged between the counter-electrode and the emission layer, and one block layer, which is arranged between one of the doped charge carrier transport layers and the emission layer. The organic layers of the stack are formed by means of n (n&#x2266;k+2) organic matrix materials, where the n organic matrix materials comprise the k organic matrix materials of the emission layer. The stack with the organic layers can also be executed in a block-layer-free manner, where then the emission layer and the doped charge carrier transport layer are formed from an organic matrix material. Furthermore, a method for manufacturing such arrangements is stated.

Arrangement for an organic pin-type light-emitting diode and method for manufacturing

The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120&#xb0; C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.

Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component

The invention relates to a light emitting component with organic layers and emission of triplet exciton states (phosphorescent light) with increased efficiency, having a layer sequence with a hole injecting contact (anode), one or more hole injecting and transporting layers, a system of layers in the light emission zone, one or more electron transport and injection layers and an electron injecting contact (cathode), characterized in that the light emitting zone comprises a series of heterojunctions with the materials A and B (ABAB . . . ) that form interfaces of the type 'staggered type II', one material (A), having hole transporting or bipolar transport properties and the other material (B) having electron transporting or bi-polar transport properties, and at least one of the two materials A or B being mixed with a triplet emitter dopant that is able to efficiently convert its triplet exciton energy into light.

Phosphorescent light-emitting component comprising organic layers

A light emitting component with organic layers, e.g., an organic light-emitting diode, which includes a substrate, at least one light emitting layer, and at least one charge carrier transport layer, having a cathode on the substrate and light emission through the anode. The light emitting component may further include a transport layer that is p-doped with an organic material.

Inverted organic light emitting diode with doped layers

Growing community of inventors

Dresden, Germany

Jan Blochwitz-Nimoth