Oxford University Innovation Ltd

Jan Andries Mol

George Andrew Davidson Briggs

Simon Benjamin

Ying Li

The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.

Method for forming nano-gaps in graphene

The present disclosure relates to novel memristive devices, uses thereof, and processes for their preparation. In a first aspect, the disclosure provides a quantum memristor, including a first quantum dot (QD) which is capacitively coupled to a second quantum dot (QD), a source electrode, a drain electrode, and a bath electrode, wherein the source electrode and the drain electrode are coupled via quantum tunneling to QDand the bath electrode is coupled via quantum tunneling to QD, and wherein QDis capacitively coupled to either the source electrode or the drain electrode.

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Oxford, United Kingdom

Jan Andries Mol