Mapper Lithography IP B.v.

Asml Netherlands B.v.

Jan Andries Meijer

Paul Ijmert Scheffers

Vincent Sylvester Kuiper

Niels Vergeer

Erwin Slot

Abdourahmane Ange Sarr

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.i.e.,) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

Charged particle lithography system with alignment sensor and beam measurement sensor

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device

The invention relates to a method for determining a distance between charged particle beamlets in a multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a converter element for converting charged particle energy into light and a light sensitive detector provided with a two-dimensional pattern of beamlet blocking and non-blocking regions. The method comprises scanning a first beamlet over the pattern, receiving light generated by the converter element, and converting the received light into a first signal. Then the two-dimensional pattern and the first beamlet are moved relatively with respect to each other over a predetermined distance. Subsequently, the method comprises scanning a second beamlet over the pattern, receiving light generated by the converter element, and converting the received light into a second signal. Finally, the distance between the first beamlet and second beamlet is determined based on the first signal, the second signal and the predetermined distance.

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Rotterdam, Netherlands

Jan Andries Meijer