Synopsys, Inc.

Kawa, Jamil

Moroz, Victor

Sproch, James D.

Lefferts, Robert B.

Jamil Kawa

Victor Moroz

Deepak Dattatraya Sherlekar

Stephen Robert Whiteley

Thu V Nguyen

James David Sproch

Tzong-Kwang Henry Yeh

Qing Su

Zongwu Tang

Shih-Yao Christine Sun

Raymond Tak-Hoi Leung

Prashant Dubey

Robert Beverly Lefferts

Min Ni

Charles C Chiang

Xin Wang

Narendra V Shenoy

Kritika Aditya

Raul Camposano

Eric M Mlinar

Robert E Freeman

Joanne Huang

Andrew Edward Horch

Eby G Friedman

Subarnarekha Sinha

Min-Chun Tsai

Ishita Satishchandra Desai

Shivangi Mittal

Surya Prakash Gupta

Abdelrahman G Qoutb

Raymond Leung

Robert B Lefferts

A superconducting anti-fuse based field programmable gate array (FPGA) may include a first set of superconducting passive transmission lines, a second set of superconducting passive transmission lines, and at least one anti-fuse located at an intersection of a first superconducting passive transmission line from the first set of superconducting passive transmission lines and a second superconducting passive transmission line from the second set of superconducting passive transmission lines. A first terminal of the anti-fuse may be electrically connected to the first superconducting passive transmission line and a second terminal of the anti-fuse may be electrically connected to the second superconducting passive transmission line. The anti-fuse may transition from a first state having a non-zero resistance to a second state having a zero resistance below a critical temperature.

Superconducting anti-fuse based field programmable gate array

A structure may include a set of metal layers disposed on a substrate layer, where a dielectric material is disposed between adjacent metal layers in the set of metal layers. The structure may include a first superconducting structure and a second superconducting structure created in a metal layer selected from the set of metal layers. The first superconducting structure may have a first length along a first direction which is parallel to a primary routing direction of the metal layer, a second length along a second direction which is parallel to the substrate layer and perpendicular to the first direction, and a third length along a third direction which is directed away from the substrate layer and perpendicular to the first direction and the second direction. The third length may be greater than the second length.

Interconnects, inductors, transformers, and power architectures for circuits

On-chip testing of a superconductive integrated circuit device includes receiving a superconductive circuit design having superconductive logic elements. Further, a first testability characteristic for first test circuitry at a first node within the superconductive circuit design is determined. The first testability characteristic corresponds to one or more of a test generation control level and a test observability control level. An updated superconductive circuit design from the superconductive circuit design is generated based on the first testability characteristic for the first test circuitry. The superconductive circuit design includes the first test circuitry at the first node.

Superconductive integrated circuit devices with on-chip testing

Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include alternating planar superconducting structures and planar non-superconducting structures arranged along a direction away from a wafer surface.

Josephson junction structures

A parameterized superconducting circuit may include a set of sub-blocks which include superconducting circuitry. Different sub-blocks in the set of sub-blocks may be clocked using clock signals having different phases. Along a first direction, relative locations of the set of sub-blocks may be fixed. Along a second direction, relative locations of the set of sub-blocks may be determined based on a set of parameter values.

Parameterized superconducting multi-row circuit

Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

Power harvesting for integrated circuits

The independent claims of the present disclosure signify a concise description of embodiments. An electronic structure based on complementary-field effect transistor (CFET) architecture is disclosed. The electronic structure comprises an n-channel metal-oxide-semiconductior (NMOS) gate-all-around (GAA) channel in a first layer, and p-channel metal-oxide-semiconductor (PMOS) GAA channel in a second layer. The PMOS GAA channel is wider compared to the NMOS GAA channel. The first layer is above the second layer and separated by a dielectric layer.

CFET architecture for balancing logic library and SRAM bitcell

Energy consumption is reduced within an Internet of Things (IoT) device, without degrading operating performance of the corresponding internal circuitry. A first internal supply voltage (VDDa) used to supply the internal circuitry is reduced from a VDD supply voltage to a lower voltage during an idle state, thereby reducing leakage currents in the internal circuitry. The first internal supply voltage (VDDa) may be reduced to a voltage that is one threshold voltage (Vtp) lower than the VDD supply voltage. A second internal supply voltage (VSSa) used to supply the internal circuitry is increased from the VSS supply voltage to a voltage higher than the VSS supply voltage during the idle state, thereby further reducing leakage currents in the internal circuitry. The second internal supply voltage (VSSa) may be increased to a voltage that is one threshold voltage (Vtn) higher than the VSS supply voltage.

Internet of things (IoT) power and performance management technique and circuit methodology

Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include a first superconducting structure and a second superconducting structure disposed on a plane parallel to a silicon wafer surface. A non-superconducting structure may be disposed between the first superconducting structure and the second superconducting structure. A direction of current flow through the non-superconducting structure may be parallel to the silicon wafer surface.

Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include a non-superconducting structure having a hollow region. A first superconducting structure may be disposed inside the hollow region of the non-superconducting structure, and a second superconducting structure may be disposed around the non-superconducting structure outside the hollow region.

A single flux quantum (SFQ) circuit can include a combinational logic network, which can include a set of SFQ logic cells. The SFQ circuit can also include an SFQ sequencing circuit, which can be used to generate delayed versions of clock pulses to clock the set of SFQ logic cells.

Single flux quantum circuit that includes a sequencing circuit

A system to enable detection of the process corner of each of the P and N devices of an SRAM array (of bitcells) and of peripheral devices. This permits more focused (optimized and compensated) design of non-SRAM peripheral circuits and of read and write assist circuits for better handling of process distribution impact on circuits improving functionality and yield.

SRAM and periphery specialized device sensors

A bit cell is described. In some embodiments, the bit cell comprises (1) a magnetic tunnel junction (MTJ), and (2) an access transistor circuit coupled to the MTJ, wherein the access transistor circuit comprises a negative-capacitance field-effect-transistor.

Magnetoresistive random access memory (MRAM) bit cell with a narrow write window distribution

A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first plurality of gate traces extending across the set of fins in the first block without crossing the inter-block insulator, and a second plurality of gate traces extending across the set of fins in the second block without crossing the inter-block insulator. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and include an inter-block connector arranged to connect gate traces in the first and second blocks.

Growing community of inventors

Campbell, CA, United States of America

Jamil Kawa