The State University of New York

Jamil Kahn Muhammad

Di Wu

Fatemeh Shahedipour-Sandvik

A highly dislocation free compound semiconductor, e.g. AlInGaN (0&#x2266;x, y&#x2266;1), is formed on a lattice mismatched substrate, e.g. Si, by first depositing a polycrystalline buffer layer on the substrate. A defective layer is then created at or near the interface of the substrate and the polycrystalline buffer layer, e.g. through ion implantation. A monocrystalline template layer of the compound semiconductor is then created on the buffer layer, and an epilayer of the compound semiconductor is grown on the template layer. A compound semiconductor based device structure may be formed in the epilayer.

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Jamil Kahn Muhammad