Applied Materials, Inc.

Jamie Saephan

Srinivas D Nemani

Ellie Y Yieh

Thorsten B Lill

Nicolas J Bright

Yifeng Zhou

Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si&#x2014;O-containing protecting layer on the low-k dielectric layer. The Si&#x2014;O-containing protecting layer is removed with a third plasma process.

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Alameda, CA, United States of America

Jamie Saephan