Motorola Corporation

Jamie K Schaeffer

Bich-Yen Nguyen

Vidya S Kaushik

Tat Ngai

A semiconductor device with dual gate electrodes and its method of formation is taught. A first metal/silicon gate stack and a first gate dielectric are formed over a first doped region. The metal/gate stack comprises a metal portion over the first gate dielectric and a first gate portion over the metal portion. A silicon gate and a second gate dielectric are formed over the second doped region. In one embodiment, the first and second gate portions are P&plus; doped silicon germanium and the metal portion is TaSiN. In another embodiment, the first and second gate portions are N&plus; doped polysilicon and the metal portion is TaSiN.

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Austin, TX, United States of America

Jamie K Schaeffer