International Business Machines Corporation

Globalfoundries Inc.

Smartsens Technology (cayman) Co., Limited

Eastman-kodak Company

Omnivision Technologies, Inc.

James William Adkisson

Jeffrey P Gambino

Mark David Jaffe

John J Ellis-Monaghan

Anthony K Stamper

Robert K Leidy

Jed Hickory Rankin

Qizhi Liu

Andres Bryant

David Louis Harame

Arne Watson Ballantine

Jeffrey Bowman Johnson

Edward J Nowak

John Joseph Pekarik

Ramachandra Divakaruni

Edmund Juris Sprogis

Randy William Mann

Rajendran Krishnasamy

Alfred Grill

Vibhor Jain

Kirk David Peterson

Katherine Lynn Saenger

Wilbur David Pricer

Thomas M Shaw

Alain F Loiseau

Deborah A Neumayer

John Maxwell Cohn

Stephen Ellinwood Luce

Brent A Anderson

Michael Patrick Chudzik

Effendi Leobandung

Jack Allan Mandelman

Carl John Radens

William R Tonti

Robert J Gauthier, Jr

Dureseti Chidambarrao

Kevin K Chan

Marwan H Khater

Gary Bela Bronner

Wagdi William Abadeer

Kiran V Chatty

Steven H Voldman

Timothy Harrison Daubenspeck

Wolfgang Sauter

Zhong-Xiang He

Alvin Jose Joseph

Christopher David Muzzy

Renee Tong Mo

Robert Michael Guidash

Richard John Rassel

Thomas J Dunbar

Panglijen Candra

Randy Lee Wolf

Charles S Musante

Jerome Brett Lasky

Erin C Jones

Richard L Rassel

Charles Thomas Black

Paul David Agnello

Rama Divakaruni

Thomas Gregory Sopchak

David P Vallett

John Anthony Bracchitta

James Randall Elliott

Leendert M Huisman

Dale J Pearson

Charles F Musante

Jeffrey Scott Brown

Hon-Sum Philip Wong

Michael Joseph Zierak

Natalie Barbara Feilchenfeld

Richard A Phelps

Hongwen Yan

Dale Warner Martin

David C Thomas

Leah M P Pastel

Benjamin T Voegeli

Phillip J Nigh

Edward T Nelson

Max L Lifson

William F Clark, Jr

James Stuart Dunn

Christopher Stephen Putnam

Renata A Camillo-Castillo

Michael John Hargrove

Howard Smith Landis

Mark Levy

Scott David Halle

Heon Lee

Jeffrey C Maling

Naim Moumen

Edward P Maciejewski

Bruce Walter Porth

James Allan Bruce

Peter B Gray

Peter John Geiss

Cameron E Luce

Mary Elizabeth Weybright

Mickey H Yu

Glen L Miles

Fabrication methods and device structures for a heterojunction bipolar transistor. A trench isolation region is formed that surrounds an active region of semiconductor material, a collector is formed in the active region, and a base layer is deposited that includes a first section over the trench isolation region, a second section over the active region, and a third section over the active region that connects the first section and the second section. An emitter is arranged over the second section of the base layer, and an extrinsic base layer is arranged over the first section of the base layer and the third section of the base layer. The extrinsic base layer includes a first section containing polycrystalline semiconductor material and a second section containing single-crystal semiconductor material. The first and second sections of the extrinsic base layer intersect along an interface that extends over the trench isolation region.

Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer

An advanced contact module for optimizing emitter and contact resistance and methods of manufacture are disclosed. The method includes forming a first contact via to a first portion of a first device. The method further includes filling the first contact via with metal material to form a first metal contact to the first portion of the first device. The method further includes forming additional contact vias to other portions of the first device and contacts of a second device. The method further includes cleaning the additional contact vias while protecting the first metal contact of the first portion of the first device. The method further includes filling the additional contact vias with metal material to form additional metal contacts to the other portions of the first device and the second device.

Contact module for optimizing emitter and contact resistance

A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

Backside integration of RF filters for RF front end modules and design structure

Methods for designing and fabricating a current mirror. A first layout is received for a first back-end-of-line (BEOL) stack that is coupled with an emitter of a bipolar junction transistor in a current mirror that has a first current ratio. A second layout for a second back-end-of-line (BEOL) stack, which differs from the first BEOL stack, is determined such that, when the second BEOL stack is coupled with the emitter of the bipolar junction transistor, the first current ratio is changed to a second current ratio. The change from the first current ratio to the second current ratio, which is based on the change from the first layout for the first BEOL stack to the second layout for the second BEOL stack, is accomplished without changing a front-end-of-line (FEOL) layout of the bipolar junction transistor.

Methods of tuning current ratio in a current mirror for transistors formed with the same FEOL layout and a modified BEOL layout

Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.

Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

Switchable filters and design structures

Device structures and fabrication methods for heterojunction bipolar transistors. A trench isolation region surrounds an active region that includes a collector, and a base layer includes a first section composed of a single-crystal semiconductor material that is arranged over the active region and a second section composed of polycrystalline semiconductor material that is arranged over the trench isolation region. A first semiconductor layer of the second section of the base layer is removed selective to a second semiconductor layer of the second section of the base layer to define a gap arranged in a vertical direction between the second semiconductor layer of the second section of the base layer and the trench isolation region. An emitter is formed on the first section of the base layer.

Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

Device structure and fabrication methods for a bipolar junction transistor. One or more trench isolation regions are formed in a substrate to define a device region having a first width. A protect layer is formed on a top surface of the one or more trench isolation regions and a top surface of the device region. An opening is formed in the protect layer. The opening is coincides with the top surface of the first device region and has a second width that is less than or equal to the first width of the first device region. A base layer is formed that has a first section on the device region inside the first opening and a second section on the protect layer.

Implementing stress in a bipolar junction transistor

Growing community of inventors

Jericho, VT, United States of America

James William Adkisson