Texas Instruments Corporation

James Wayne Klawinsky

Scott Robert Summerfelt

Byron Lovell Williams

Salvatore Frank Pavone

Asad Mahmood Haider

Scott Kelly Montgomery

Michael LeRoy Huber

Blake Ryan Pasker

Courtney Michael Hazelton

George Nicholas Harakas

Gregory Lee Hendy

Evelyn Anne Lafferty

An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.

Integrated circuit structure with capacitor and resistor and method for forming

A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.

TaN integrated circuit (IC) capacitor

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Irving, TX, United States of America

James Wayne Klawinsky