Ionq, Inc.

James Walker Steere

Jason Madjdi Amini

Jonathan Albert Mizrahi

Jeremy Matthew Sage

Aspects of the present disclosure describe devices trapping devices for use in quantum information processing (QIP) architectures, and more particularly, to the use and fabrication of a multi-layer ion trap on shaped glass or dielectric substrate. A method for fabricating the ion trap is described that includes preparing a back surface of the substrate, building a multi-layer stack on the top surface of the substrate, and completing the back etch to break through the substrate and etching through a metal and dielectric in the multi-layer stack to complete the formation of the ion trap. Shaping of the ion trap may also include trap narrowing features, wings, and/or undercutting. An ion trap fabricated using this approach may be used in a QIP system to trap atomic species provided through a hole in the back of the substrate for use as qubits in quantum operations and computations.

Multi-layer ion trap on shaped glass or dielectric substrate

An interposer is described that is made from an electrically insulating, thermally efficient substrate (e.g., sapphire) and has a load hole for use with ion traps in atomic-based QIP architectures. The interposer load hole aligns with a load hole in the ion trap such that atomic species can be provided from the back of the interposer to the front of the ion trap for ionization and confinement. The interposer may include angled traces for wire bonding to the ion trap, where the angled traces enable more open light access when using laser or optical beams during operation of the ion trap. Electrical routing in the interposer may involve more than one layer of routing, separated by an insulating dielectric material such as a polyimide. Routing in the interposer may also contain active electronic components. The load hole in the interposer may have a straight or tapered inner wall.

Growing community of inventors

College Park, MD, United States of America

James Walker Steere