Shipley Company, L.l.c.

Rohm & Haas Electronic Materials LLC

The Texas A&m University System

Dow Global Technologies LLC

The University of Queensland

Other

International Business Machines Corporation

Rohm and Haas Electronics Materials LLC

Dupont Electronic Materials International, LLC

Rohm and Haas Company

Shiply Company Inc.

James W Thackeray

James F Cameron

George W Orsula

Roger F Sinta

Emad Aqad

Vipul Jain

Peter Trefonas, Iii

Paul J LaBeaume

Owendi Ongayi

Mark D Denison

Suzanne M Coley

James Michael Mori

Sheri L Ablaza

Karen L Wooley

Angelo Anthony Lamola

Guorong Sun

Sangho Cho

Amy M Kwok

David A Valeri

Hiroshi Ito

Ronald Anthony DellaGuardia

Andrew Keith Whittaker

Martha M Rajaratnam

Idriss Blakey

Wu-Song S Huang

George G Barclay

Gary Ganghui Teng

Timothy G Adams

Edward K Pavelchek

Jin Wuk Sung

Gerald B Wayton

Rosemary Bell

Ahmad E Madkour

Thomas M Zydowsky

Stephen A Fine

Richard C Hemond

Michael F Cronin

David R Medeiros

Dianne Canistro

Su Jin Kang

Robin L Miller-Fahey

Roger A Nassar

Ke Du

Peter R Hagerty

Greg Breyta

Wayne Martin Moreau

Phillip Dene Hustad

Cheng-Bai Xu

Mingqi Li

Jong Keun Park

Kuang-Jung Chen

Charles R Szmanda

Ahmad D Katnani

Brad C Bailey

Willard E Conley

Ke Yang

Manuel doCanto

D Patrick Green

Richard J Carey

Xisen Hou

Robert J Kavanagh

Choong-Bong Lee

Tomas Marangoni

Paul J Labeaume

ChoongBong Lee

Brandon Wenning

Vaishali Raghu Vohra

Manual doCanto

Meiliana Siauw

Andrew W McCullough

The present invention relates to new photoresist compositions that comprise (a) a polymer comprising an acid generator bonded thereto; and (b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups.

Photoresists comprising multiple acid generator compounds

A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Photoresist compositions and pattern formation methods

A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and Mis an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition

New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Monomers, polymers and lithographic compositions comprising same

New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

Salts and photoresists comprising same

A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Zis an organic anion; Aris substituted or unsubstituted Cheteroaryl group comprising a furan heterocycle; and Ris substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Arand Rare optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Aror substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through Ror substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Zas a pendant group to a polymer; and a solvent.

New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Zwitterion compounds and photoresists comprising same

New Te-salts are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

Iodine-containing polymers for chemically amplified resist compositions

A photoacid generator compound having formula (I): 

Iodine-containing photoacid generators and compositions comprising the same

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Acid generators and photoresists comprising same

Acid-cleavable monomer and polymers including the same

Disclosed herein is a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety, a silicon containing moiety, or a combination of a halocarbon moiety and a silicon containing moiety; a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo acid-catalyzed deprotection causing a change of solubility of the graft block copolymer in a developer solvent.

Self-assembled structures, method of manufacture thereof and articles comprising the same

Growing community of inventors

Braintree, MA, United States of America

James W Thackeray