International Business Machines Corporation

Other

James Thomas Fahey

Wayne Martin Moreau

Kevin Michael Welsh

Gary T Spinillo

Ratnam Sooriyakumaran

Robert Lavin Wood

Leo L Linehan

Willard E Conley

Brian Wayne Herbst

Christopher F Lyons

Pamela E Jones

Michael Page McGirr

Robert R Dichiara

Randolph J Smith

Erik A Puttlitz

James Patrick Collins

Judy B Dorn

William J Miller

A peripheral data storage device for IPHONE mobile phone and IPOD media player devices having an encasement containing a system of electronic circuits which communicates with the IPHONE mobile phone or IPOD media player by means of a host software system and a device software system. The device also has a charge pass through connector and optional card slots. Various views of the device are shown in FIGS.-

Peripheral data storage device

Peripheral storage device

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Making of microlithographic structures with an underlayer film

Microlithographic structure with an underlayer film containing a

Method for patterning a photoresist material wherein an anti-reflective

Microlithographic structure with an underlayer film comprising a

An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-UV antireflection coatings and methods for use thereof

Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA). The blend should include at least 10% by weight of the co-polymer. In operation, hydrogen bonding between the hydroxystyrene sub-units and the methacrylate sub-units decreases the availability of sites for crosslinking, and this reduction in crosslinking sites makes the blend less susceptible to formation of polymer resist microbridges. The invention is practicable with a polymers having a wide range of molecular weights (2000-50000 daltons), and development can be achieved using the industry standard 2.38 wt % trimethylammonium hydroxide (TMAH) developer without any adverse impact on the photoresist.

Composition for eliminating microbridging in chemically amplified

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Poughkeepsie, NY, United States of America

James Thomas Fahey