Agere Systems Inc.

At&t Bell Laboratories

Lucent Technologies Inc.

James Thomas Cargo

Frank Alexander Baiocchi

John Michael DeLucca

Ronald J Holmes

Jeffrey B Bindell

Michael C Hughes

Charles B Martin

Alvaro Maury

Scott Wayne McLellan

Ruichen Liu

Charles William Berthoud

Kouros Azimi

Barry J Dutt

Kultaransingh N Hooghan

Ronald James Holmes

An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits

Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography.

Material removing processes in device formation and the devices formed thereby

A calibration standard includes a silicon substrate having a plurality of defined regions and a plurality of calibration marks placed on respective defined regions of the silicon substrate. Each calibration mark comprises a different calibration dimension indicator and a corresponding dimension identifier. A method for calibrating a transmission electron microscope using the standard comprises positioning the calibration standard in a viewing area of the transmission electron microscope and sequentially viewing the marks and adjusting the calibration of the microscope for each mark viewed.

Calibration standard for transmission electron microscopy

The present invention provides an apparatus and method for detecting if a person has attempted to tamper with an integrated circuit (IC). The apparatus is located on the IC and comprises detection circuitry that detects a build up of electrical charge on the IC and disablement circuitry that disables the IC when the detection circuitry detects a build up of electrical charge on the IC. The method comprises detecting if a build up of electrical charge on the IC has occurred and disabling the IC when a build up of electrical charge on the IC has been detected.

Method and apparatus for disabling an integrated circuit (IC) when an attempt is made to bypass security on the IC

A method of manufacturing integrated circuits utilizing chemical mechanical polishing (CMP) is disclosed. A dielectric layer, illustratively, having a dopant, dye, etc. termed a 'marker layer' is formed upon a wafer having partially fabricated integrated circuits thereon. An undoped, undyed layer is deposited upon the marker layer. The undoped or undyed layer is polished and the waste slurry is monitored until a signal indicating the exposure of the signal layer is obtained. Analysis of the signal provides an indication of when the CMP process should be terminated.

Method of mechanical polishing

Oxides of tantalum and niobium are selectively etched using patterned silicon oxide deposited by a low-temperature chemical vapor deposition as a mask and a sulfate flux to selectively remove exposed portions of the tantalum or niobium oxide substrate.

Lithium niobate etchant

A proton-exchange method of forming optical waveguides within a lithium-based optical substrate is disclosed which utilizes sulfuric acid as the proton source. The substrate is masked to expose the areas desired to be transformed into waveguiding regions and immersed in a heated sulfuric acid bath for a period of time sufficient to provide the exchange between the protons in the acid and the lithium in the substrate. The presence of the protons in the substrate results in increasing the extraordinary refractive index .DELTA.n.sub.e in the unmasked area so that optical guiding may be accomplished. Upon removal of the substrate from the sulfuric acid bath, the substrate must be annealed so as to drive the protons to a depth sufficient to provide effective guiding.

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Bethlehem, PA, United States of America

James Thomas Cargo