Ion Optics, Inc.

Spire Corporation

Nomadics, Inc.

Bodkin Design & Engineering LLC

Other

James T Daly

Edward A Johnson

Andrew Bodkin

Irina Puscasu

John S Wollam

Mark P McNeal

Martin U Pralle

Peter G Loges

W Andrew Bodkin

William Andrew Bodkin

V Mark Villafuerte

Christopher J Von Benken

Michael J Groden

Mark P Mcneal

A spectral imager includes a filter array, a pixel array, and a lenslet array therebetween. The filter array includes a plurality of filter regions. The lenslet array includes a plurality of lenslets each configured to form a respective image of the filter array on a respective one of a plurality of regions of the pixel array. The spectral imager may also include a fore-optic lens, the filter array being located between the lenslet array and the fore-optic lens. The spectral imager may also include a fore-optic lens, the filter array being located between the lenslet array and the fore-optic lens. Each of the plurality of filter regions is configured to selectively transmit radiation based on wavelength and/or polarization.

Spectral imager and spectral imaging method

A birefringent filter includes an EM directing element in optical alignment with a first surface of the birefringent plate. A polarimetric imager includes a birefringent filter including a birefringent plate formed of a birefringent material and an EM directing element in optical alignment with a first surface of the birefringent plate. The imager further includes a detector in optical alignment with a second surface of the birefringent plate. A projection system includes an EM directing element and a birefringent filter. The filter includes (1) a birefringent plate formed of a birefringent material and having a first surface in optical alignment with the emissions source, and (2) an EM directing element in optical alignment with a second surface of the birefringent plate.

Optical systems and methods employing a polarimetric optical filter

A blackbody radiation device () includes a planar filament emission element () and a planar detector () for respectively producing and detecting radiation having width dl/l less than about 0.1 to test a sample gas, where l is the wavelength of the radiation; a reflector (); a window (W); an electrical control (); and a data output element ().

Infrared radiation sources, sensors and source combinations, and methods of manufacture

An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.

Tunable photonic crystal

An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.

A radiation source including a base, a curved reflector attached to the base, pins passing through the base and within the reflector, and a filament of high emissivity material helically wound about the pins and having opposing ends electrically connected to the pins so that upon passage of electrical energy through the filament, the filament becomes electrically heated and emits infrared radiation.

Filament for radiation source

An absorption spectroscopy apparatus including a sample cell having a central axis, and a side wall coaxially positioned about the axis. The side wall defines a generally circular cross-section of the cell as taken along a plane extending perpendicular to the axis, wherein the generally circular cross-section of the sample cell has an average radius. The side wall includes a plurality of light reflective segments arrayed about the axis, wherein each reflective segment has a cross-section taken along a plane extending perpendicular to the axis of the cell that is concave with respect to the axis. The concave cross-section of each segment has an average radius that is unequal to the average radius of the generally circular cross-section of the sample cell. Among other aspects and advantages, the apparatus of the present disclosure is able to use incoherent, non-collimated light sources while maintaining high optical throughput efficiencies.

Absorption spectroscopy apparatus and method

A blackbody radiation device () includes a planar filament emission element () and a planar detector () for respectively producing and detecting radiation having width dl/1 less than about 0.1 to test a sample gas, where 1 is the wavelength of the radiation; a reflector (); a window (W); an electrical control (); and a data output element ().

An absorption spectroscopy apparatus having a fluid inlet and a fluid outlet. The apparatus includes a sample cell including an axis, a side wall having at least one curved reflective surface arrayed about the axis and facing inwardly with respect to the cell such that a beam of energy directed against a predetermined location on the reflective surface is reflected back and forth off the reflective surface and remains in substantially the same plane while inside the cell, and at least one port in the sidewall. The apparatus also includes at least one source/detector reflector having a curved profile in a plane extending perpendicular to the axis of the cell. The reflector is positioned with respect to the port of the cell to reflect energy through the port of the cell and against the predetermined location on the reflective surface of the side wall of the cell.

A spectrometer system comprises (i) a slab waveguide characterized as an index of refraction higher than a surrounding medium, and having front surface and a rear surface opposite thereto, the front surface including a input portion for accepting optical radiation, a diffractor portion and an exit portion, (ii) a diffraction grating disposed on said diffractor portion of said front surface, (iii) a detector array aligned adjacent to the exit portion, and (iv) a mirror coated on the rear surface of the waveguide. Radiation transmitted within the waveguide from the input portion is reflected and collimated by the mirror to the granting. Light diffracted from the grating is dispersed to the mirror and reflected toward and through the exit portion and onto the array.

Monolithic infrared spectrometer apparatus and methods

A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

GaAs device having a strain-free c-doped layer

A process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

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Mansfield, MA, United States of America

James T Daly