University of California

Japan Science and Technology Agency

Seoul Opto Device Co., Ltd.

Soraa, Inc.

Seoul Viosys Co., Ltd.

King Abdulaziz City for Science and Technology

Slt Technologies, Inc.

US Government As Represented by the Secretary of the Army

Hughes Electronics Corporation

Agency of Industrial Science and Technology

Regents of the Univeristy of California

Japan Science and Technology Center

King Abdulaziz City for Science and Technology (kacst)

James Stephen Speck

Steven P DenBaars

Shuji Nakamura

Benjamin A Haskell

Umesh Kumar Mishra

Arpan Chakraborty

Troy J Baker

Robert M Farrell

Anurag Tyagi

Chung Hoon Lee

Hong San Kim

Michael D Craven

Erin C Young

Mathew C Schmidt

Jae Ho Lee

Sung Han Kim

Derrick S Kamber

Jae Jo Kim

Paul Thomas Fini

Makoto Saito

Hitoshi Sato

Rajat Sharma

Stacia Keller

Hisashi Yamada

Kenji Iso

Hong Zhong

Mark Philip D'Evelyn

Daniel F Feezell

Claude C A Weisbuch

Michael Iza

John F Kaeding

Aurelien J F David

Po Shan Hsu

Brendan Jude Moran

Zhen Chen

Kathryn Merced Kelchner

Hugues Marchand

Douglas Wayne Pocius

Melvin McLaurin

Hwa Mok Kim

Ki Bum Nam

Asako Hirai

Kwang-Choong Kim

Hiroaki Ohta

P Morgan Pattison

Tal Margalith

Benjamin P Yonkee

Roy B Chung

Zhongyuan Jia

Bilge M Imer

Hisashi Masui

Kwang Choong Kim

Siddha Pimputkar

Dong-Seon Lee

Feng Wu

Kenneth J Vampola

Christiane Poblenz

Daniel A Cohen

Casey O Holder

John T Leonard

Abdulrahman Albadri

Asad J Mughal

Daniel A Haeger

Ahmed Alyamani

Hirohiko Hirasawa

Shuji Nakamua

Shigemasa Matsuda

Shin-Ichiro Kawabata

Pierre M Petroff

Chang Soo Suh

Evelyn Lynn Hu

You-Da Lin

Adele Clare Tamboli

David Hwang

William Houck

Siddharth Rajan

Robert G Wilson

Christopher D Pynn

Stephen P DenBaars

Hitsohi Sato

Stacy J Kowsz

David J F Aurelien

Charles Forman

SeungGeun Lee

Jared Kearns

Hao Lee

Jo Anna Johnson

John M Zavada

Abdullah Ibrahim Alhassan

Charles H Church

Christian J Zollner

Nathan A Pfaff

Arash Pourhashemi

Matthew T Hardy

Kathryn M Kelchner

Paul T Fini

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices

A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Method for processing of semiconductor films with reduced evaporation and degradation

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where &#x2212;15&#x3c;x&#x3c;&#x2212;1 and 1&#x3c;x&#x3c;15 degrees.

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/&#x2212; 15 degrees in the c-direction

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 &#x3bb;, or at least 20 &#x3bb;, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In&#x2014;Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

III-nitride surface-emitting laser and method of fabrication

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

Contact architectures for tunnel junction devices

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Hybrid growth method for III-nitride tunnel junction devices

A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cmdrive current and less than 15% at 35 A/cmdrive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 &#x3bc;m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 &#x3bc;m. A flip chip display device is also disclosed.

Methods for fabricating III-nitride tunnel junction devices

A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

III-nitride tunnel junction with modified P-N interface

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Disclosed is an improved light-emitting device for an AC power operation. A conventional light emitting device employs an AC light-emitting diode having arrays of light emitting cells connected in reverse parallel. The arrays in the prior art alternately repeat on/off in response to a phase change of an AC power source, resulting in short light emission time during a &#xbd; cycle and the occurrence of a flicker effect. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a &#xbd; cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.

Light emitting device for AC power operation

Growing community of inventors

Goleta, CA, United States of America

James Stephen Speck