Average Co-Inventor Count = 4.88
ph-index = 18
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. University of California (108 from 15,331 patents)
2. Japan Science and Technology Agency (29 from 1,302 patents)
3. Seoul Opto Device Co., Ltd. (8 from 162 patents)
4. Soraa, Inc. (6 from 204 patents)
5. Seoul Viosys Co., Ltd. (5 from 712 patents)
6. King Abdulaziz City for Science and Technology (2 from 406 patents)
7. Slt Technologies, Inc. (2 from 32 patents)
8. US Government As Represented by the Secretary of the Army (1 from 8,677 patents)
9. Hughes Electronics Corporation (1 from 1,332 patents)
10. Agency of Industrial Science and Technology (1 from 1,037 patents)
11. Regents of the Univeristy of California (1 from 16 patents)
12. Japan Science and Technology Center (1 from 1 patent)
130 patents:
1. 11735419 - Method for processing of semiconductor films with reduced evaporation and degradation
2. 11552452 - Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
3. 11532922 - III-nitride surface-emitting laser and method of fabrication
4. 11453956 - Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
5. 11411137 - III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
6. 11348908 - Contact architectures for tunnel junction devices
7. 11217722 - Hybrid growth method for III-nitride tunnel junction devices
8. 11164997 - III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
9. 11158760 - Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices
10. 10985285 - Methods for fabricating III-nitride tunnel junction devices
11. 10685835 - III-nitride tunnel junction with modified P-N interface
12. 10529892 - Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
13. 10400352 - Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
14. 10292220 - Light emitting device for AC power operation
15. 10100425 - Method for synthesis of high quality large area bulk gallium based crystals