Facebook Technologies, LLC

Oculus, Vr, LLC

Meta Platforms Technologies, LLC

James Small

James Ronald Bonar

Zheng Gong

Gareth John Valentine

Daniel Bryce Thompson

Richard Ian Laming

Stephen Warren Gorton

Nicholas Daniel Trail

Wanli Chi

Daniel Brodoceanu

Oscar Torrents Abad

Patrick Joseph Hughes

Christopher Percival

David Massoubre

Vincent Brennan

Martin David Dawson

William Anthony Wall

Erdan Gu

A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.

Grin lens structure in micro-LED devices

Disclosed herein are techniques for reducing the pitch between light-emitting diodes (LEDs) in an array of LEDs. According to an aspect of the invention, a method includes forming a plurality of stacks of layers on a surface of a semiconductor, with a p contact at an interface between each stack and a p-type layer of the semiconductor. The semiconductor is etched to form a plurality of mesa shapes corresponding to the plurality of stacks. A dielectric is formed on at least a portion of each mesa shape and at least a portion of each stack. A reflector is formed on at least a portion of the dielectric and at least a portion of the semiconductor to provide an n contact at an interface between the reflector and an n-type layer of the semiconductor. The reflector is physically separated from the p contact for each stack.

LEDs arrays having a reduced pitch

Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a method for manufacturing a light emitting apparatus involves forming a plurality of semiconductor layers including a first semiconductor layer, a second semiconductor layer, and a light emission layer between the first semiconductor layer and the second semiconductor layer. The method further involves forming an electrical contact and a spacer. The electrical contact is formed on a surface of the first semiconductor layer. The spacer is formed on the surface of the first semiconductor layer, around the electrical contact. After forming the spacer, the plurality of semiconductor layers is etched to form a mesa with sidewalls that extend from an outer edge of the spacer. The spacer operates as an etch mask that causes the electrical contact to be substantially centered between opposing sidewalls of the mesa.

Method for manufacturing a spacer for self-aligned mesa

GRIN lens structure in micro-LED devices

Disclosed herein are techniques for reducing the pitch between light-emitting diodes (LEDs) in an array of LEDs. According to an aspect of the invention, a device includes an array having a plurality of LEDs and a reflector that is in Ohmic contact with at least two adjacent LEDs of the plurality of LEDs. Each LED of the plurality of LEDs includes a p contact, and the reflector is physically separated from the p contact of each LED of the plurality of LEDs.

LED arrays having a reduced pitch

Described are light emitting apparatus with self-aligned elements and techniques for manufacturing such light emitting apparatus. In certain embodiments, a light emitting apparatus includes a mesa formed by a plurality of semiconductor layers. The light emitting apparatus further includes an electrical contact on one of the semiconductor layers and a spacer around the electrical contact. The spacer is aligned with respect to the electrical contact, which permits etching around the spacer to define the shape of the mesa in such a way that the mesa is also aligned with respect to the electrical contact. In particular, the electrical contact is substantially centered between opposing sidewalls of the mesa.

Spacer for self-aligned mesa

A light assembly can have an array of light sources forming rows and columns, where the array comprises a plurality of chips, and each chip comprises a subarray of light sources forming the rows and columns. A boundary between chips in the array can be configured to extend diagonally across rows and columns of the array such that, for each column across which the boundary extends, the first row of the plurality rows may not have a light source disposed in the respective column, but a second row of the plurality of rows has a light source disposed in the respective column.

Scanning display with increased uniformity

Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.

Laser lift-off masks

Disclosed are techniques related to reflectors having overall mesa shapes. Such a reflector may be formed over an overall mesa-shaped, layered structure of an apparatus for emitting light. The overall mesa-shaped, layered structure may comprise a mesa complement structure, a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor arranged in layers. Thus, the reflector may be configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.

Reflectors having overall mesa shapes

There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.

Integrated medical device

Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions can be implanted in a region around an active region that emits light to function as an optical waveguide. The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays. As such, the light extraction efficiency of the mLEDs is increased.

Optical waveguides in micro-LED devices

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Semiconductor modification process for conductive and modified electrical regions and related structures

A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.

Electron flood lithography

Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light emitting diode (LED) array. The method includes forming a first mesa area of a first LED and a second mesa area of a second LED, where a trench is defined between the first and second mesa areas. At least a portion of the trench is filled with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.

Display contrast

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

Growing community of inventors

Langbank, United Kingdom

James Small