Alliance for Sustainable Energy, LLC

Midwest Research Institute

James Scott Ward

Howard M Branz

David Samuel Ginley

Mark W Wanlass

Qi Wang

Timothy A Gessert

Daniel L Meier

Vernon Yost

Anna Duda

Jian Hu

A device () comprises a semiconductor diode () and a switchable element () positioned in stacked adjacent relationship. The semiconductor diode () and the switchable element () are electrically connected in series with one another. The switchable element () is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

Stacked switchable element and diode combination with a low breakdown switchable element

A method () of texturing silicon surfaces () such to reduce reflectivity of a silicon wafer () for use in solar cells. The method () includes filling () a vessel () with a volume of an etching solution () so as to cover the silicon surface) of a wafer or substrate (). The etching solution () is made up of a catalytic nanomaterial () and an oxidant-etchant solution (). The catalytic nanomaterial () may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution () includes an etching agent (), such as hydrofluoric acid, and an oxidizing agent (), such as hydrogen peroxide. Etching () is performed for a period of time including agitating or stirring the etching solution (). The etch time may be selected such that the etched silicon surface () has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Nanoparticle-based etching of silicon surfaces

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

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Englewood, CO, United States of America

James Scott Ward