USA As Represented by Secretary of the Navy

James S Burgess

Brian H Houston

Adam L Friedman

Jeffrey W Baldwin

Bernard R Matis

Felipe Bulat-Jara

A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; and tuning the bandgap.

Hydrogenated graphene with surface doping and bandgap tunability

A method of introducing a bandgap in single layer graphite on a SiOsubstrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.

Growing community of inventors

Nashua, NH, United States of America

James S Burgess