Edwards Limited

The Boc Group, Inc.

Other

Boc, Inc.

James Robert Smith

Andrew James Seeley

Peter L Timms

Marilena Radoiu

Gary Peter Knight

Michael Roger Czerniak

Nigel James Gibbins

Graeme Huntley

Gareth David Stanton

Derek Martin Baker

Christopher James Philip Clements

Stephen John Coles

In a method of controlling operation of a processing system, a host computer, a process tool and a component of an evacuation system, for example an abatement tool, are connected to a system bus. The abatement tool monitors signals transmitted on the system bus between the host computer and the process tool, and signals received directly from the process tool. The abatement tool uses information contained within the monitored signals to generate a signal for the process tool regarding an operating characteristic of the abatement tool. This signal is transmitted either directly or over the system bus to the process tool, which uses the generated signal to control an operating state of the process tool.

Evacuation system alerts based on process tool systems bus monitoring

In a method of operating a microwave plasma abatement apparatus comprising a microwave generator, and a gas chamber for receiving microwave energy from the microwave generator and within which a plasma is generated using the microwave energy, the amount of microwave energy that is not absorbed within the gas chamber is monitored, and the power of the microwave energy generated by the microwave generator is adjusted in dependence on the monitored microwave energy.

Microwave plasma abatement apparatus

A method is described for treating a gas stream comprising fluorine (F) gas. In a preferred embodiment, the method comprises adding water vapor to a gas stream and conveying the gas stream and water vapor to a reaction chamber containing a heated bed of material to react with Fto form an inorganic fluoride while inhibiting formation of CFwithin the reaction chamber, and at least partially evacuating the reaction chamber so that the gas stream is conveyed to and from the reaction chamber at sub-atmospheric pressure.

Method of treating a gas stream

A microwave plasma reactor () comprises a reactor chamber, a microwave resonant cavity () located within the reactor chamber, a waveguide () for conveying microwave radiation to the resonant cavity, the waveguide having a convergent tapered portion, means for forming an electromagnetic standing wave within the resonant cavity from the microwave radiation for initiating and sustaining a plasma within the resonant cavity, the resonant cavity having a gas inlet and a gas outlet, and conduit means extending from the gas outlet for containing a plasma conveyed from the resonant cavity with a gas flowing from the gas inlet to the gas outlet.

Microwave plasma reactor

System for treating an effluent fluid stream from a process tool including a vacuum pump () for drawing an effluent stream from the process tool chamber, an abatement device () for treating the effluent stream and a liquid ring pump () for at least partially evacuating the abatement device (). During use, the abatement device () converts one or more components of the effluent stream, for example F2 or a PFC, into one or more liquid-soluble a compounds, for example HF, that are less harmful to the environment. The liquid ring pump () receives the effluent stream and a liquid, and exhausts a solution of the liquid and the liquid-soluble component of the effluent stream. The liquid ring pump () thus operates as both a wet scrubber and an atmospheric vacuum pumping stage.

Gas abatement

A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.

In a method of treating a gas exhausted from a process chamber, the exhaust gas is conveyed to a vacuum pump () and a nitrogen purge gas is added to the exhaust gas for pumping with the exhaust gas. Gas exhaust from the pump is conveyed to an abatement device () for abating the exhaust gas. The amount of purge gas added to the exhaust gas is adjusted in response to a variation of the composition of the exhaust gas, or the composition of the gas supplied to the process chamber, to optimise the abatement of the exhaust gas.

Method of treating gas

A method is described for treating a gas stream containing a flammable gas, such as hydrogen or a hydrocarbon gas. The gas stream is conveyed to a liquid ring pump (), to which a gaseous oxidant and water are supplied. The water and the gas stream are discharged from the pump (), with the discharged gas stream being subsequently separated from the liquid, and conveyed to a pyrolysis device () for pyrolysing the flammable gas and the oxidant. Any particulates and acidic species within the gas stream are retained by the water within the liquid ring pump to inhibit corrosion or blockage of the pyrolysis device (). A filter or other device () may be provided to remove water from the gas stream before it enters the pyrolysis device ().

Method of controlling operation of a processing system

A multi-stage vacuum pump comprises, between adjacent stages of the pump, a continuous ignition source for igniting a fuel within a pumped fluid. This can ensure that the concentration of the fuel in fluid exhaust from the pump is below its lower explosive limit.

Vacuum pump with a continuous ignition source

A method of treating a gas stream containing silane or other silicon-containing gas is described, in which the gas stream is conveyed to a liquid ring pump or screw-mechanism pump, to which are also supplied an oxidant for oxidising the silicon-containing gas within the pump, and a liquid for forming a liquid ring or intermittent flushing within the pump. A liquid stream containing said liquid and a by-product of the oxidation of the silicon-containing gas is exhaust from the pump.

Apparatus is described for treating an effluent fluid stream from a semiconductor manufacturing process tool. The apparatus comprises a combustion chamber, means for heating the combustion chamber, and a nozzle for injecting the effluent stream into the combustion chamber. The apparatus is configured to enable a fuel and an oxidant to be selectively injected into the effluent stream as required to optimise the combustion conditions for a particular effluent stream. In one to embodiment, a lance projecting into the nozzle selectively injects an oxidant into the effluent stream, and a sleeve surrounding the nozzle selectively injects a fuel into the effluent stream.

A method for the abatement of one or more pyrophoric gases in a gas stream, which includes introducing water in to the gas stream and/or mixing the gas stream with preheated air and introducing the gas stream in to a container in which the pyrophoric gases are abated.

Abatement of semiconductor processing gases

A process for the combustive destruction of noxious substances from a gas stream in which the gas stream and added fuel gas as a mixture into a combustion zone that is surrounded by an exit surface of a foraminous gas burner. A fuel gas and air/oxygen mixture are simultaneously supplied to the foraminous gas burner to effect combustion at the exit surface. The resulting combustion product stream is discharged from the combustion zone. The oxygen is added to the gas stream and the fuel gas prior to the introduction of the mixture to the combustion zone and the oxygen/fuel gas mixture burns at the point of injection.

Removal of noxious substances from gas streams

A method for the scrubbing of noxious substances from an exhaust gas stream from an evacuated process chamber containing a tool for the processing of semiconductor devices. The method comprises directing the stream from the chamber in to a duct containing a multi-way valve and selectively adjusting the valve to cause different fractions of the stream to be directed to relevant treatment/collection/exhaust points.

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Taunton, United Kingdom

James Robert Smith