Ovonyx Inc.

Stmicroelectronics S.r.l.

Ovonyx Memory Technology, LLC

Carlow Innovations LLC

James Reed

Tyler A Lowrey

Semyon D Savransky

Ilya V Karpov

Sergey A Kostylev

Gianpaolo Spadini

George A Gordon

Ward D Parkinson

Ward M Parkinson

Stanford R Ovshinsky

Jason S Reid

Kuo-Wei Chang

Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.

Immunity of phase change material to disturb in the amorphous phase

A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.

Ovonic threshold switch film composition for TSLAGS material

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Rochester Hills, MI, United States of America

James Reed