Plant Pv, Inc.

Leland Stanford Junior University

Hitachi Chemical Company, Ltd.

Nanocore Technologies

James Randy Groves

Stephen T Connor

Brian E Hardin

Craig H Peters

Alberto Salleo

Theodore Charles Sorom

Bruce M Clemens

Garrett J Hayes

Bingrui Joel Li

Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver particles, low-melting-point base-metal particles, organic vehicle, and optional crystallizing agents. Specific formulations have been developed that produce stratified metal films that contain less silver than conventional pastes and that have high peel strengths. Such pastes can be used to make high contact resistance metallization layers on silicon.

Silver-bismuth non-contact metallization pastes for silicon solar cells

A material and method are disclosed such that the material can be used to form functional metal pieces by producing an easily sintered layered body of dried metal paste. On a microstructural level, when dried, the metal paste creates a matrix of porous metal scaffold particles with infiltrant metal particles, which are positioned interstitially in the porous scaffold's interstitial voids. For this material to realize mechanical and processing benefits, the infiltrant particles are chosen such that they pack in the porous scaffold piece in a manner which does not significantly degrade the packing of the scaffold particles and so that they can also infiltrate the porous scaffold on heating. The method of using this paste provides a technique with high rate and resolution of metal part production due to a hybrid deposition/removal process.

Sinterable metal paste for use in additive manufacturing

A biaxially textured crystalline layer formed on a substrate using ion beam assisted deposition (IBAD) is provided. The biaxially textured crystalline layer includes an oriented CaFcrystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaFcrystalline layer is disposed for growth of a subsequent epitaxial layer and the CaFcrystalline layer is an IBAD CaFlayer. The biaxially textured CaFlayer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.

Depositing calcium fluoride template layers for solar cells

Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Core-shell nickel alloy composite particle metallization layers for silicon solar cells

Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Growing community of inventors

Sunnyvale, CA, United States of America

James Randy Groves