International Business Machines Corporation

Other

James R Lloyd

Chih-Chao Yang

Lawrence Alfred Clevenger

Timothy Joseph Dalton

Thomas M Shaw

Yun-Yu Wang

James J Demarest

Michael Wayne Lane

Darryl D Restaino

Philip L Flaitz

Stefanie Ruth Chiras

Chester T Dziobkowski

James Marc Leas

Derren Neylon Dunn

David Clifford Long

David Carroll Challener

Ronald G Filippi

Krishna Seshan

Steven G Barbee

Arunava Gupta

Kris V Srikrishnan

Michael J Sullivan

Paul S Ho

Joseph M Harvilchuck

Horatio Quinones

James M Oberschmidt

Arunachala Nagarajan

Jasvir Singh Jaspal

David J Talaber

Keith F Beckham

David P Fouts

Morris Shatzkes

Darren N Dunn

Devandra Gupta

This invention provides protection from mosquitoes for an individual lying on a bed. An articulated frame supports mosquito netting over the exposed flesh of the individual. The articulated frame is easily deployed and retracted by the individual while lying on the bed. In the retracted position the bed is fully accessible for making-up or changing the bedding.

Articulated frame that supports mosquito netting over a bed

An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiO&#x2014; or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer

A structure and method for monitoring extrusion failures. The structure includes: a test wire having first and second ends; first and second vias contacting first and second ends of the test wire; a first monitor structure electrically isolated from the test wire and surrounding a periphery of the test wire; and a second monitor structure over the test wire, the second monitor structure electrically isolated from the test wire, the second monitor structure extending over at least the first end of the test wire.

Extrusion failure monitor structures

An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiO- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer

An orthopedic implant assembly comprising a stabilizing element, a securing element which attaches the stabilizing element to the bone, and a stopping member in the stabilizing element which inhibits the securing element from loosening or backing out of the bone. The stabilizing element has at least one bore with the stopping member therein. In one embodiment, the stopping member has a reversibly expandable inner and outer diameter to allow the securing element to pass posteriorly through the stopping member, but thereafter prevent or inhibit the securing element from anteriorly backing out of the posterior section of the transverse passageway. In another embodiment, the stopping member is secured to an anterior section of the transverse passageway, and the head of the securing element generally has a compressed configuration with a diameter less than the diameter of the stopping member, in which configuration the head can pass through the stopping member, and an uncompressed configuration with a diameter larger than the diameter of the stopping member.

Orthopedic implant assembly

A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor.

Method and apparatus for causing an open circuit in a conductive line

Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

Electromigration lifetime increase of lead base alloys

A process for the preparation of a semiconductor device in a thin film of a monocrystalline semiconductor material supported on the surface of a substrate. In the process a thin film of a monocrystalline semiconductor material is formed on a substrate. The film of monocrystalline semiconductor material is doped at various depths with various types and concentrations of dopants. Thereafter, contacts are established at various depths of the doped thin film. In one embodiment, a thin film of a non-monocrystalline semiconductor material is deposited on a substrate. The thin film of non-monocrystalline semiconductor material is doped in situ as it is being deposited with various doping impurities to provide various types and concentrations of doping impurities at various depths. The thin film of non-monocrystalline semiconductor material has at least one tapered region terminating in a point. The thin film of non-monocrystalline semiconductor material is traversed with a particle beam. The traverse is initiated at the point causing nucleation of a crystal at the point and subsequent growth of a monocrystalline thin film of semiconductor material from the point during the traverse. Contacts are then established at various depths to provide a semiconductor device, such as a bipolar transistor.

Thin film semiconductor device and method for manufacture

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Katonah, NY, United States of America

James R Lloyd