Applied Materials, Inc.

Intellectual Ventures Holding 81 LLC

James R Ciulik

Jeffrey C Hudgens

Tetsuya Ishikawa

Mohsen Salek

Frederik W Freerks

Tim Leong

Eric M Taleff

Al DiFrancesco

Timothy Y Wang

A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.

Method for growing single crystals of metals

The present invention generally provides a robot blade which provides a plurality of semi-conductive or conductive contacts disposed at least partially on the surface of the blade to support a substrate above the blade. The contacts are preferably located inwardly from the edge of the blade and toward the center of the blade to provide a collection area on the blade to capture any particles which may form. The blade is preferably made of a semi-conductive material, such as alumina or other semi-conductive material, to provide an electrical flow path through the contact(s) to discharge any electrical charge which may build up on the substrate during processing.

Robot blade for semiconductor processing equipment

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Austin, TX, United States of America

James R Ciulik