Hrl Laboratories, LLC

Hughes Electronics Corporation

Rambus Inc.

Syphermedia International, Inc.

Raytheon Company

Hughes Aircraft Company

Other

Inside Secure

Verimatrix, Inc.

Promtek

Promtek Programmable Memory Technology, Inc.

James Peter Baukus

William M Clark, Jr

Lap-Wai Chow

Lap Wai Chow

Ronald Paul Cocchi

Bryan Jason Wang

Gavin J Harbison

Allan R Kramer

Jennifer J Zinck

Paul Yang

Mark E Bianco

Paul Ouyang

Douglas A Dwyer

Faik S Ozdemir

David J Knobbe

A camouflaged application specific integrated circuit is disclosed. The camouflaged ASIC includes at least one camouflaged FinFET, which includes a substrate of a first conductivity type, a fin, disposed on the substrate, the fin including a source region of a second conductivity type, a drain region of the second conductivity type, and a channel region of the first conductivity type. The camouflaged application specific integrated circuit also includes a gate disposed over and substantially perpendicular to the channel region, forming one or more transistor junctions with the fin. In one embodiment, the substrate includes a punch through stop (PTS) region of the second conductivity type disposed between the fin and the substrate, the PTS region electrically shorting the source region of the fin to the drain region of the fin.

Always-on FinFET with camouflaged punch stop implants for protecting integrated circuits from reverse engineering

A system and method for adding a source contact, a drain contact, and an apparent gate contact to a FinFET having a fin including a source region, a drain region, and a gate disposed over the fin forming one or more transistor junctions with the fin. The method comprises producing a source contact opening extending downward to a first region electrically coupled to the source region, a drain contact opening extending downward to a second region electrically coupled to the drain region, and a gate contact opening extending downward to a third region electrically isolated from the gate, and filling the source contact opening, the drain contact opening, and the gate contact opening with a conductive metal.

Electrically isolated gate contact in FINFET technology for camouflaging integrated circuits from reverse engineering

An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical functions, wherein the functional logic cells comprise a camouflage cell including: a source region of a first conductivity type, a drain region of the first conductivity type, and a camouflage region of a second conductivity type disposed between the source region and the drain region. The camouflage region renders the camouflage cell always off in a first camouflage cell configuration and always on in a second camouflage cell configuration having a planar layout substantially indistinguishable from the first configuration.

Physically unclonable camouflage structure and methods for fabricating same

The camouflage technique described herein introduces programmed configuration inputs to Micro Netlists, creating Programmable Micro Netlists (PMNLs). PMNLs are a group of camouflaged and non-camouflaged cells that may be configured to perform one of several possible logic functions. They retain all the protective properties of non-programmable MNLs, but also allow for secure post-manufacture configuration of their aggregate logic function.

Secure logic locking and configuration with camouflaged programmable micro netlists

A camouflaged FinFET is disclosed. The camouflaged FinFET comprises a fin and a gate, disposed over and perpendicular to the fin. The fin includes a source region of a first conductivity type, a drain region of the first conductivity type, a channel region of a second conductivity type, the channel region disposed between the source region and the drain region, and a camouflaged fin region of the second conductivity type, the camouflaged Fin region at least partially rendering the camouflaged FinFET in an always-on condition and having a planar layout substantially indistinguishable from a fin region of an uncamouflaged FinFET.

Camouflaged FinFET and method for producing same

A method and an apparatus for camouflaging an application specific integrated circuit are disclosed. The ASIC comprises a circuit comprising a plurality of interconnected functional logic cells performing a logical function. In one embodiment, the method comprises accepting a coded description of the circuit, wherein the coded description describes the circuit in terms of components comprising a sequential logic component and a virtual camouflage component, generating a logical description of the circuit, the logical description of the circuit comprising a logical description of the virtual camouflage component, and replacing, in the logical description of the circuit, the logical description of the virtual camouflage component with a logical description of a functionally equivalent technology-dependent camouflaged component.

Method and apparatus for camouflaging an integrated circuit using virtual camouflage cells

A method and apparatus for camouflaging an application specific integrated circuit (ASIC), wherein the ASIC comprises a plurality of interconnected functional logic is disclosed. The method adds functionally inert elements to the logical description or provides alternative definitions of standard logical cells to make it difficult for reverse engineering programs to be used to discover the circuit's function. Additionally, post processing may be performed on GDS layers to provide a realistic fill of the empty space so as to resemble structural elements found in a functional circuit.

Method and apparatus for camouflaging a standard cell based integrated circuit with micro circuits and post processing

A method and apparatus for camouflaging an application specific integrated circuit (ASIC), wherein the ASIC comprises a plurality of interconnected functional logic is disclosed. The method adds functionally inert elements to the logical description or provides alternative definitions of standard logic cells to make it difficult for reverse engineering programs to be used to discover the circuit's function.

Method and apparatus for camouflaging a standard cell based integrated circuit

A technique for and structures for camouflaging an integrated circuit structure. A layer of conductive material having a controlled outline is disposed to provide artifact edges of the conductive material that resemble an operable device when in fact the device is not operable.

Use of silicide block process to camouflage a false transistor

A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed having a well of a first conductivity type under the gate region being disposed adjacent to active regions of a first conductivity type. The well forming an electrical path between the active regions regardless of any reasonable voltage applied to the integrated circuit structure.

Growing community of inventors

Westlake Village, CA, United States of America

James Peter Baukus