Cypress Semiconductor Corporation

James Paul Myers

Fredrick B Jenne

Igor G Kouznetsov

Ryan Tasuo Hirose

Bogdan I Georgescu

Cristinel Zonte

Leonard Vasile Gitlan

Paul Fredrick Ruths

Vijay Raghavan

Vijay Srinivasaraghavan

Eric N Mann

Galen E Stansell

Timothy V Wright

J Kenneth Fox

A system including a memory architecture is described. In one embodiment, the memory architecture includes an array of non-volatile memory cells, a first independently controlled voltage generation circuit, a plurality of register bits to store programmable values used by the independently controlled voltage generation circuit and a control circuit coupled to the first independently controlled voltage generation circuit. The first independently controlled voltage generation circuit is coupled to supply a positive voltage to the array during program and erase operations so that a magnitude of the positive voltage is applied across a storage note of an accessed memory cell of the array. The plurality of register bits to store programmable values used by the independently controlled voltage generation circuit to control the magnitude of the positive voltage. The control circuit controls a duration of the positive voltage. Other embodiments are also described.

Memory architecture having two independently controlled voltage pumps

A system including a memory architecture is described. In one embodiment, the memory architecture includes an array of non-volatile memory cells, a first independently controlled voltage generation circuit, a plurality of register bits to store programmable values used by the independently controlled voltage generation circuit and a control circuit coupled to the first independently controlled voltage generation circuit. The first independently controlled voltage generation circuit is coupled to supply a positive voltage to the array during program and erase operations so that a magnitude of the positive voltage is applied across a storage node of an accessed memory cell of the array. The plurality of register bits to store programmable values used by the independently controlled voltage generation circuit to control the magnitude of the positive voltage. The control circuit controls a duration of the positive voltage. Other embodiments are also described.

In embodiments described herein, a memory architecture has an array of non-volatile memory cells and a pair of independently controlled voltage pumps. The pair of voltage pumps is coupled for supplying both positive and negative voltage biases to the memory array during program and erase operations, such that a sum of the magnitudes of the positive and negative voltage biases is applied across a storage node of an accessed memory cell.

A memory architecture is provided with an array of non-volatile memory cells arranged in rows and columns, and a sense amplifier coupled to at least one column within the array for sensing a data bit stored within one of the non-volatile memory cells. In order to provide accurate sensing, a reference current generator is provided and coupled to the sense amplifier. The reference current generator provides a first reference current having adjustable magnitude and adjustable slope, and a second reference current having adjustable magnitude, but constant slope. The first reference current is supplied to the sense amplifier for sensing the data bit. The second reference current is supplied to a control block for generating clock signals used to control sense amplifier timing.

Memory architecture having a reference current generator that provides two reference currents

A circuit for latching inputs and enabling outputs on a bidirectional pin using a PLL lock detect circuit is disclosed. A PLL lock detect circuit generates an active lock control signal when an output reference signal is phase locked relative to an input reference signal applied to a phase locked loop (PLL) circuit. A latch and enable circuit is responsive to this lock control signal to latch the input signal (off of the pin), and, thereafter, enable output of an output signal onto the bidirectional pin. The latch and enable circuit includes a data latch to store the input signal when the lock control signal goes to an active state. The latch and enable circuit also includes a delay circuit to delay the lock control signal to produce a delayed lock control signal, and a tristateable output driver that is tristated when the delayed lock control signal is inactive, but, operates to pass (i.e., enable) the output signal to the bidirectional pin when the delayed lock control signal is active.

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Woodinville, WA, United States of America

James Paul Myers