Varian Semiconductor Equipment Associates, Inc.

James Paul Buonodono

Joseph C Olson

Anthony Renau

Kevin M Daniels

Jon Ballou

Ludovic Godet

William Tyler Weaver

Timothy J Miller

Costel Biloiu

Vikram Singh

Deepak Arabagatte Ramappa

Russell J Low

Eric D Hermanson

Atul Gupta

Robert J Mitchell

Joseph P Dzengeleski

Michael Esposito

Frank Sinclair

Charles T Carlson

Paul J Murphy

Steven M Anella

Paul Sullivan

Piotr R Lubicki

Jeffrey Charles Blahnik

Tyler Burton Rockwell

Ernest E Allen

Edward W Bell

Michael Rohrer

James W Wilkinson

Daniel McGillicudy

A fastening system for attaching two components with a spring force is disclosed. The fastening system utilizes O-rings to provide the spring force, eliminating the need for any metal components. The O-ring may be disposed in an O-ring holder that has a plurality of spokes. When compressed, indentations are created in the O-ring by the spokes. The number of spokes and their size and shape determine the spring force of the fastening system. In another embodiment, vertically oriented O-rings are utilized. The fastening system may be used to fasten various components of an ion source.

System for using O-rings to apply holding forces

In one embodiment, an ion extraction optics for extracting a plurality of ion beams is provided. The ion extraction optics may include, an extraction plate, the extraction plate defining a cut-out region, the cut-out region being elongated along a first direction. The extraction apparatus may include a slidable insert, the slidable insert disposed to overlap the cut-out region, and slidably movable with respect to the extraction plate, along the first direction, wherein the slidable insert and cut-out region define a first aperture and a second aperture.

Extraction apparatus and system for high throughput ion beam processing

An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.

Apparatus and method for minimizing thermal distortion in electrodes used with ion sources

Provided are approaches for transferring workpieces between multiple pressure environments. In one approach, a system for moving workpieces between a first pressure environment and a second pressure environment includes a first vacuum enclosure, a second vacuum enclosure, and an access port disposed between the first vacuum enclosure and the second vacuum enclosure. The system further includes a transfer carrier having a workpiece holder for retaining a workpiece, the transfer carrier disposed within the first vacuum enclosure and moveable between a first process position and a second process position, wherein in the first process position the workpiece is disposed within the first vacuum enclosure, and wherein in the second process position the workpiece holder abuts the access port to expose the workpiece to the second vacuum enclosure and to create a seal around the access port to seal the first vacuum enclosure from the second vacuum enclosure.

System and method for moving workpieces between multiple vacuum environments

An ion implantation apparatus including an enclosure defining a process chamber, a carriage slidably mounted on a shaft within the process chamber and coupled to a drive mechanism adapted to selectively move the carriage along the shaft. A platen assembly can be coupled to the carriage, and a linkage conduit can extend between a side wall of the enclosure and the carriage. The linkage conduit can include a plurality of pivotably interconnected linkage members that define a contiguous internal volume that is sealed from the process chamber. The contiguous volume can be held at a desired vacuum pressure separate from the vacuum environment of the process chamber.

Linkage conduit for vacuum chamber applications

One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.

High-throughput ion implanter

A workpiece adjustment assembly is disclosed. The assembly can include a shaft, a spherical bearing, and a wafer support. A spherical housing receives the spherical bearing and allows the bearing to rotate therein. The housing and bearing may form an air bearing. A seal may be formed in the housing to prevent gas from the air bearing and the ambient atmosphere from migrating to a process chamber side of the housing. A set of spherical air pads may be positioned on an ambient side of the bearing to press the bearing against the housing when the process chamber is not under vacuum conditions. The seal can include a set of differentially pumped grooves. The spherical bearing enables the wafer manipulation end, and a wafer attached thereto, to be moved with four degrees of freedom. The arrangement facilitates isocentric scanning of a workpiece. Methods for using the assembly are also disclosed.

Workpiece support structure with four degree of freedom air bearing for high vacuum systems

A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Processing apparatus and method of treating a substrate

A system for processing a substrate includes a plasma chamber to generate a plasma therein. The system also includes a process chamber to house the substrate, where the process chamber is adjacent the plasma chamber. The system also includes a rotatable extraction electrode disposed between the plasma chamber and substrate, where the rotatable extraction electrode is configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis.

Dynamic electrode plasma system

A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

Apparatus and method for controllably implanting workpieces

A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.

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Amesbury, MA, United States of America

James Paul Buonodono