Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

James Paris

Vijay Matthew Vaniapura

Li Diao

Chan-Yun Lee

HaiAu PhanVu

Robert George Elliston

David Gilbert

Tom Tillery

A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Method for high aspect ratio photoresist removal in pure reducing plasma

Growing community of inventors

McKinney, TX, United States of America

James Paris