Applied Materials, Inc.

James Omer L'Heureux

Zheng Yuan

David Muquing Hou

Michael Santiago Cox

Rongping Wang

Ryan T Downey

Jibing Zeng

Joseph A Van Gompel

Christopher F Lane

Jeonghoon Oh

Hari K Ponnekanti

Lin Zhang

Gopalakrishna B Prabhu

Umesh M Kelkar

Ala Moradian

Michael Johnson

Shuran Sheng

Yan Rozenzon

Hemant P Mungekar

Karthik Ramanathan

Alexander S Polyak

Josef Thomas Hoog

Andreas Neuber

Calvin R Augason

Maxime Cayer

Tony H Tong

Juergen Henrich

Susanne Schlaefer

Rohit Mahakali

Gino Gerardo Crispieri

John L Koenig

Mike M Huang

The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.

Method and system for detecting anomalies in a semiconductor processing system

A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.

Parameter sensing and computer modeling for gas delivery health monitoring

One or more embodiments described herein relate to abatement systems for reducing Brand Clin semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Clgases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and 'excites' the gases within the process chamber. When HBr is energized, it forms Br. Brand Clare corrosive and toxic. However, the addition of HO in the plasma reactor quenches the Brand Clemissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

Reduction of Brand Clin semiconductor processes

Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust gases from a deposition process performed in the processing chamber, the treatment assisting with the trapping particles in an exhaust cooling apparatus. The remote plasma source then generates a cleaning plasma for treating exhaust gases from a cleaning process performed in the processing chamber, the cleaning plasma reacting with the trapped particles in the exhaust cooling apparatus and cleaning the exhaust cooling apparatus.

Apparatus for gaseous byproduct abatement and foreline cleaning

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.

Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Method and apparatus for gas abatement

A method for removing one or more processing by-products found in deposition systems, such as in vacuum forelines of vapor deposition systems is provided. The method comprises performing a deposition process to deposit a layer on a substrate positioned in a deposition chamber. Hydrogen-containing by-products are produced in a vacuum foreline fluidly coupled with the deposition chamber during the depositing process. The method further comprises flowing an oxidizing agent gas into the vacuum foreline to react with at least a portion of the hydrogen-containing by-products in the foreline.

Hydrogen partial pressure control in a vacuum process chamber

Methods and apparatus for transferring one or more substrates from a first pressure environment to a second pressure environment is provided. In one embodiment, a load lock chamber is provided. The load lock chamber comprises a first circular housing, and a second circular housing disposed within and movable relative to the first circular housing, one of the first circular housing or the second circular housing comprising a plurality of discrete regions, wherein at least a portion of the plurality of discrete regions are in selective fluid communication with one of at least two vacuum pumps based on the angular position of the second circular housing relative to the first circular housing.

Load lock chamber designs for high-throughput processing system

Growing community of inventors

Santa Clara, CA, United States of America

James Omer L'Heureux