Apple Inc.

Other

Pulstone Technologies, LLC

Luxvue Technology Corporation

James Michael Perkins

Andreas Bibl

Kelly C McGroddy

Jean-Jacques P Drolet

Kapil Vinod Sakariya

Dmitry S Sizov

Charles R Griggs

David P Bour

Arpan Chakraborty

Daniel Arthur Haeger

Lucas A Jacobson

Patrick Brent Williams

Lorin Jacobson

Ion Bita

Jonathan S Steckel

James E Pedder

Sajjad Ali Khan

Elmar Gehlen

Roland Van Gelder

Sergei Y Yakovenko

Dariusz Golda

Hyeun-Su Kim

Andreas Bibi

Sumant Sood

Kelly Mcgroddy

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

Light emitting diode display with redundancy scheme

Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Light emitting structure to aid LED light extraction

A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.

Micro LED mixing cup

Metal-to-metal adhesion joints are described as a manner to hold down micro devices to a carrier substrate within the context of a micro device transfer manufacturing process. In accordance with embodiments, the metal-to-metal adhesion joints must be broken in order to pick up the micro devices from a carrier substrate, resulting in micro devices with nubs protruding from bottom contacts of the micro devices. Once integrated, the micro devices are bonded to a receiving substrate, the nubs may be embedded in a metallic joint, or alternatively be diffused within the metallic joint as interstitial metallic material that is embedded within the metallic joint.

Micro device metal joint process

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

LED structures for reduced non-radiative sidewall recombination

LEDs and methods of fabrication are described. The LEDs may include a diffusion revealed blocking junction within a cladding layer in order to confine current within an interior of the LED, and mitigate non-radiative recombination at the LED sidewalls.

Diffusion revealed blocking junction

Quantum dot integration schemes

Growing community of inventors

Mountain View, CA, United States of America

James Michael Perkins