Advanced Micro Devices Corporation

James Markarian

Mark T Ramsbey

Unsoon Kim

David H Chi

Kenneth Wo-Wai Au

A single interpoly dielectric layer is provided for use in semiconductor devices. The single interpoly dielectric layer being formed of silicon graded such that certain regions within the single interpoly dielectric layer are either oxygen-rich or nitrogen-rich. The single interpoly dielectric layer can be formed in-situ within a single deposition tool. In certain embodiments, the resulting single interpoly dielectric layer can be made thinner and/or can be formed to provide improved dielectric characteristics when compared to a conventional oxide-nitride-oxide (ONO) interpoly dielectric layer that has three separate and unique layers. Thus, the single interpoly dielectric layer is highly desirable for use in reduced-size semiconductor devices and/or semiconductor devices requiring improved data retention capabilities, such as non-volatile memory cells.

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Los Altos, CA, United States of America

James Markarian