Honeywell International Inc.

Alliedsignal Inc.

Allied Corporation

James M O'Connor

Olaleye A Aina

John B McKitterick

Thomas C Loughran

A robust single-chip hydrogen sensor and a method for fabricating such a sensor. By utilizing an interconnect metallization material that is the same or similar to the material used to sense hydrogen, or that is capable of withstanding an etchant used to pattern a hydrogen sensing portion, device yields are improved over prior techniques.

Manufacturable single-chip hydrogen sensor

A permeable protective coating for a single-ship hydrogen sensor. A hydrogen-permeable coating is applied to a semiconductor wafer containing hydrogen sensor dies, prior to dicing of the wafer. The permeable coating is preferably an organic spin-on polymer, and the hydrogen sensors preferably include hydrogen-sensing elements composed of a palladium nickel alloy.

Permeable protective coating for a single-chip hydrogen sensor

A robust single-chip hydrogen sensor and a method for fabricating such a sensor. By adding an adhesion-promoting layer between the body of a sensor and an on-chip hydrogen-exposed electrically-resistive hydrogen-sensing element, device yields are improved when compared to directly applying the electrically-resistive hydrogen-sensing elements to the sensor body. The resistance of the sensing element is indicative of the hydrogen in the medium surrounding the sensor. According to a preferred embodiment of the present invention, the adhesion-promoting layer is a chromium (Cr) adhesion layer, and the hydrogen-exposed electrically resistive hydrogen sensing element is a PdNi alloy.

Robust single-chip hydrogen sensor

A phosphor is placed on a light emitting surface of a solid state optical source. The phosphor absorbs the narrow bandwidth light from the optical source, and emits light that has a wide bandwidth. A lens is used to collect and focus the wide bandwidth light.

Wide bandwidth solid state optical source

A method for fabricating an all silicon absolute pressure sensor employing silicon-on-insulator structures. More particularly, a method for fabricating an all silicon absolute pressure sensor based upon an ungated metal-oxide semiconductor field-effect transistor which offers a high degree of immunity to temperature effects, increased reliability, minimal substrate parasitics, reduced manufacturing variations from device to device, as well as inexpensive and simple fabrication.

Method for fabricating a silicon pressure sensor incorporating

A microminiature valve having a multilayer integral structure formed on a semiconductor substrate. The valve comprises a semiconductor substrate having inlet and outlet apertures and a raised valve seat. The substrate is overlayed with a nonporous top layer and an intermediate layer. The central portion of the intermediate layer is preferentially etched away to form an enclosed chamber connecting said inlet and outlet ports. The unetched portion of said intermediate layer peripherally supports said top layer above the valve seat. An electrically conductive electrode disposed on the unsupported portion of the top layer permits it to be electrostatically deflected to engage the valve seat and close the valve.

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Ellicott City, MD, United States of America

James M O'Connor