Raytheon Company

James M Carroll

John G Heston

John R Stanton

In an improved T/R switch configuration of a radio transceiver, the sizes of active switches coupled in series between the receive port and the common port are tapered such that the voltage referenced to ground across the active devices of the T/R switch is more evenly distributed among the switches which increases the power handling capability of that path. According to one embodiment of the present invention, an RF switch includes a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal, and a plurality of second switches coupled in series between a receive port and the common port. At least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.

High power RF switch with active device size tapering

A multi-stage amplifier for amplifying radio frequency signals includes a first amplifier stage having a first transistor and a second amplifier stage having a second transistor. The first transistor includes a first drain connected to a reference voltage through a first connection circuit. The second transistor includes a second drain connected to a reference voltage through a second connection circuit. The amplifier also includes a first transmission line connecting a portion of the first connection circuit to a portion of the second connection circuit and a resistive element connected in parallel with the first transmission line between the portion of the first connection circuit and the portion of the second connection circuit. The resistive element suppresses oscillation conditions at either of the first and second bias terminals.

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Allen, TX, United States of America

James M Carroll