Alliedsignal Inc.

Taiwan Line Tek Electronic Co., Ltd.

Honeywell International Inc.

Silitek Corporation Corporation

James Lin

Henry Chung

Shi-Qing Wang

The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

Integrated circuits with multiple low dielectric-constant inter-metal dielectrics

The invention provides microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer and an additional layer of the first dielectric material positioned on the second dielectric material. At least one via extends through the first dielectric material layer and the second dielectric material layer, and at least one trench extends through the additional layer of the first dielectric material to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.

Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits

The invention provides process for producing microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer. Either a sacrificial metal layer or and an additional layer the first dielectric material is positioned on the second dielectric material. At least one via extends through the first dielectric material layer and at least one trench extends through the additional layer of the first dielectric material and the second dielectric material layer to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.

Fabrication method of integrated circuits with multiple low dielectric-constant intermetal dielectrics

An improved electrical plug/socket includes a seat being a fixed-shaped structure, one end thereof having an insert electrode, the other end thereof having a depression forming a seat chamber, the center having a through hole, a seat edge of an outer periphery being recessed to form a plurality of seat grooves; at least two insert electrodes formed from electrically conductive metal; and a lead wire connected to the insert electrodes and extending out of the through hole, and having an outer diameter corresponding to the seat groove so as to be insertable in the seat groove for guiding orientation.

Electrical plug/socket

A key switch includes a rubber key body mounted within a key switch hole on a key pad device above a circuit board thereof, and a key cap fastened to the rubber key body at the top and depressed to move the rubber key body downward in triggering a contact on the circuit board, wherein the key cap is made from a plastic convex lens having a convex top wall and a plain bottom wall, the plain bottom wall having a light-blocking area and a light-penetrable area, the light-penetrable area being shown in the form of a pattern; the rubber key body is molded from a vulcanized rubber sealed to the plain bottom wall of the key cap through a heat sealing process. Three layers of ink are disposed between the key body and the key cap.

Magnifying key switch

A photosensitive element is adjustably mounted on a device, including a base frame having a flat base and a ball socket perpendicularly extended from the flat base and defining a half-round recess, the flat base having a center through hole through the center of the half-round recess for the insertion of a photosensitive element being connected to a light source through an electric wire, a core member, which has a ball head at one end received and turned within the half-round recess, an outer thread at an opposite end, a longitudinal through hole aligned with the center through hole on the base frame, and a lens mounted within the longitudinal through hole, and a socket shell, which has an inner thread at one end threaded onto the outer thread of the core member, a longitudinal through hole aligned with the longitudinal through hole on the core member, and a lens set mounted within the longitudinal through hole and matched with the lens on the core member.

Light control device

A female computer connector includes a flat insert connected to a housing to hold a set of receptacles therein and molded with an outer shell through the process of injection molding, wherein the housing has elongated ribs inserted into gaps on a front edge of the flat insert to separate the receptacles; the receptacles each has two projections respectively hooked in two spaced recessed retaining surface portions on a respective channel on the flat insert for positioning, and a rear end formed into two side wings pinched to bind up a respective conductor.

Growing community of inventors

Taipei, Taiwan

James Lin