Stmicroelectronics Gmbh

Sgs-thomson Microelectronics Limited

Stmicroelectronics S.a.

James Leon Worley

Mark A Lysinger

Pavan Nallamothu

Chih-Hung Tai

Mehdi Zamanian

James Brady

Elmer H Guritz

Duane Giles Laurent

Ronald T Taylor

Laurent Murillo

Milad Alwardi

Various embodiments provide an optical image stabilization circuit including a drive circuit having a power waveform generator and a power waveform conversion circuit. The power waveform generator generates a power waveform. The power waveform conversion circuit converts the power waveform to a power drive signal. An actuator is then driven by the power drive signal to move a lens accordingly and compensate for any movements and vibrations of a housing of the lens.

Optical image stabilization actuator driver power distribution control

A DAC may include a decoder configured to receive a digital input signal, and first and second sub-DACs coupled in parallel to the decoder, each of the first and second sub-DACs having first and second LSB banks, and an MSB bank coupled between the first and second LSB banks. The decoder may be configured to selectively control the first and second LSB banks, and the MSB bank based upon the digital input signal. The DAC may include an output network coupled to the first and second sub-DACs and configured to generate an analog output signal related to the digital input signal.

DAC with sub-DACs and related methods

A row driver circuit receives a first supply voltage and a second supply voltage. The circuit provides the first supply voltage on an output responsive to the first supply voltage being greater than a threshold value. The circuit generates a boosted voltage that is greater than the first supply voltage and provides that boosted voltage on the output responsive to the first supply voltage being less than the threshold value.

Method and circuit for controlling generation of a boosted voltage in devices receiving dual supply voltages

A matrix H for encoding data words is defined for wide word ECC with uniform density and a reduced number of components. The H-matrix is incorporated in an encode unit operable to Hamming encode a data word with a 10&#xd7;528 matrix generated in groups of four columns wherein; a first column is a complement of a second column; the value of the second column ranges from 9 to 271 in increments of two; a third column is a complement of a fourth column; and the value of the fourth column is the same as the value of the second column less one; and wherein a 528-bit bottom row is added to the 10&#xd7;528 matrix comprising alternating zeroes and ones starting with a zero creating an 11&#xd7;528 matrix.

H-matrix for error correcting circuitry

A parity generation circuit includes a plurality of bit-generation circuits. Each bit-generation circuit receives respective data bits and a respective hard latch signal, and operates to generate a parity signal indicating the parity of the corresponding data bits when the hard latch signal is inactive. Each bit-generation circuit drives the parity signal to a set value when the hard latch signal is active. An output circuit is coupled to the bit-generation circuits to receive the parity signals and operates to generate an output parity signal in response to the parity signals from the bit-generation circuits.

Method and system to encode and decode wide data words

A row driver circuit receives a supply voltage and operates to develop a boosted voltage having a magnitude that is equal to the sum of an incremental boost voltage and a magnitude of the supply voltage. The magnitude of the incremental boost voltage is a function of the magnitude of the supply voltage to maintain the boosted voltage at an approximately constant value independent of variations in the supply voltage. A method of generating a boosted voltage includes detecting a value of a supply voltage, generating an incremental boost voltage having a value that is a function of the detected supply voltage, and adding the generated incremental boost voltage to the supply voltage to generate the boosted voltage.

Variable boost voltage row driver circuit and method, and memory device and system including same

A sense amplifier for use in memory devices. The sense amplifier may include a pair of cross-coupled inverters, each inverter including at least two transistors. The sense amplifier may further include a first capacitor coupled to a first input/output terminal of the sense amplifier and a second capacitor coupled to a second input/output terminal thereof. A change in voltage differential appearing across the input/output terminals bootstraps the cross-coupled inverters to facilitate activation and deactivation of the transistors in the cross-coupled inverters. Consequently, response time of the sense amplifier is reduced.

Sense amplifying circuit and method

A dynamic random access memory (DRAM) device is disclosed. The DRAM device includes a memory cell array having a twisted bit line architecture. The memory cell array includes at least one pair of redundant rows of memory cells. Redundant row decode circuitry is capable of configuring the pair of redundant rows to replace any one row of memory cells having a defect. Each pair of bit lines is coupled to a distinct memory cell from each redundant row of the redundant row pair so that both the true and complement version of a data value is maintained by the redundant row pair. Rows of reference cells are disconnected and/or disabled during a memory access operation involving the redundant row pair. The use of a pair of redundant rows of memory cells to replace a single row of memory cells having a defect substantially reduces the complexity of decode circuitry for enabling the rows of reference cells.

Redundant memory cell for dynamic random access memories having twisted bit line architectures

A circuit and method are disclosed for controlling bootstrap circuitry that boosts a voltage level appearing on word lines of a dynamic random access memory device. During execution of a memory access operation, the circuit is adapted to enable the bootstrap circuitry a period of time following the memory device's sense amplifiers initially powering up. The circuit senses when the voltage appearing on a select bit line crosses a predetermined voltage level, and enables the bootstrap circuitry thereafter. In this way, a period of time elapses between the sense amplifiers turning on and the activation of the bootstrap circuitry, thereby reducing noise introduced from the sense amplifiers turning on from impacting the operation of the bootstrap circuitry.

Bit line sense circuit and method for dynamic random access memories

The invention may be incorporated into a method for forming a vertically oriented semiconductor device structure, and the semiconductor structure formed thereby, by forming a first transistor over a portion of a substrate wherein the first transistor has a gate electrode and a source and drain regions. First and second interconnect regions are formed over a portion of the gate electrode and a portion of the source and drain regions of the first transistor, respectively. A source and drain region of a second transistor is formed over the second interconnect. A Vcc conductive layer is formed over a portion of the source and drain region of the second transistor which is formed over the second interconnect.

Growing community of inventors

Flower Mound, TX, United States of America

James Leon Worley