Georgia Tech Research Corporation

James L Gole

James R Woodward

Lenward T Seals

Stephen H Cobb

Peter J Hesketh

Frank P Dudel

Mark Gilmore White

John D Stout

Zhong Lin Wang

John DeBoer

William Ivey Laminack

Z L Wang

Stephen Edward Lewis

Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, methods of enhancing sensor response with light, and the like.

Gas sensors and methods of preparation thereof

Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, and the like. One exemplary embodiment of a device, among others, includes: a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of 'nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration.

Embodiments of the present disclosure provide for methods of selecting a nanostructured deposit for a conductometric gas sensor, methods of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric gas sensor, devices including conductometric gas sensors, arrays of conductometric gas sensors, methods of determining the acidic or basic characteristic of a gas, methods of treating a sensor, and the like.

Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors

A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Porous gas sensors and method of preparation thereof

A nanowire, nanosphere, metallized nanosphere, and methods for their fabrication are outlined. The method of fabricating nanowires includes fabricating the nanowire under thermal and non-catalytic conditions. The nanowires can at least be fabricated from metals, metal oxides, metalloids, and metalloid oxides. In addition, the method of fabricating nanospheres includes fabricating nanospheres that are substantially monodisperse. Further, the nanospheres are fabricated under thermal and non-catalytic conditions. Like the nanowires, the nanospheres can at least be fabricated from metals, metal oxides, metalloids, and metalloid oxides. In addition, the nanospheres can be metallized to form metallized nanospheres that are capable as acting as a catalyst.

Silicon based nanospheres and nanowires

Embodiments of the present disclosure provide for methods of transforming from one crystal structure to another crystal structure in TiOnanocolloids and TiONnanocolloids.

Oxynitride compounds, methods of preparation, and uses thereof

Oxynitride nanoparticles, methods of preparation thereof, and methods of use thereof are disclosed. One representative oxynitride nanoparticle includes a MONnanoparticle, where x is in the range of about 1 to 3, y is in the range of about 0.5 to less than 5, and z is in the range of about 0.001 to 0.5.

Nanostructures and methods of fabrication thereof are disclosed. One representative nanostructure includes a silicon dioxide (SiO)/tin oxide (SnO) nanostructure, where x is between about 1 to about 2. The SiO/SnOnanostructure includes a SiOnanostructure having SnOnanoclusters dispersed over a portion of the surface of the SiOnanostructure.

Devices including conductometric porous silicon gas sensors, methods of fabricating conductometric porous silicon gas sensors, methods of selecting a device, methods of detecting a concentration of a gas, and methods of analyzing data.

Tin oxide nanostructures and methods of fabricating tin oxide nanostructures are disclosed. Representative nanostructures include SnOnanowires, SnOnanoribbons, and SnOnanotubes. Another representative nanostructure includes a nanostructure having a rutile crystal lattice and an orthorhombic crystal superlattice. The nanostructure can include, but is not limited to, SnOnanowires, SnOnanoribbons, and SnOnanotubes.

Tin oxide nanostructures

A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.

Enhancement, stabilization and metallization of porous silicon

The present invention is generally directed to a system for lithiating alloys. In accordance with one aspect of the invention, a method is provided for performing vapor deposition of a lithium alloy on a substrate comprising the steps of vaporizing a mass of lithium and controllably heating a lithium-soluble element, such as magnesium. The method further includes the step of disposing the lithium-soluble element in the lithium vapor, wherein the lithium vapor promotes the vaporization of the lithium-soluble element to create a combined vapor having intimately mixed constituencies from both the lithium and lithium-soluble element. Finally, the method includes the step of disposing a temperature controlled substrate in the combined vapor, whereby the combined vapor is deposited on the substrate. In accordance with another aspect of the invention, a method is provided for depositing a lithium alloy onto a substrate for producing a lithium alloy electrode, which exhibits enhanced surface diffusion of lithium.

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Atlanta, GA, United States of America

James L Gole