Advanced Technology Materials, Inc.

Mst Technology Gmbh

James J Welch

Jeffrey F Roeder

Thomas H Baum

Philip S H Chen

Frank DiMeo, Jr

Ing-Shin Barry Chen

Jeffrey W Neuner

Bryan Clark Hendrix

Mackenzie E King

Chongying Xu

Steven M Bilodeau

Michele Stawasz

Karl E Boggs

Michael S Darsillo

Peter Wrschka

Michele Stawacz

A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

High throughput chemical mechanical polishing composition for metal film planarization

A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Apparatus and process for sensing fluoro species in semiconductor processing systems

A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., &#x3e;90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.

Gas sensor with attenuated drift characteristic

A (MEMS)-based gas sensor assembly for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds that are subsequently removable for forming structure layers.

Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same

A gas detector for detecting a fluoro gas species in a gaseous environment containing same, e.g., an effluent from a semiconductor processing tool that employs corrosive fluoro species such as HF, NF, etc. for etch cleaning. The gas detector preferably employs an elongated nickel-containing gas sensor element that can be vertically mounted on a fluoro-resistant support structure. Since the nickel-containing gas sensor element is sensitive to the fluoro species and is also electrically conductive, it can function both as a sensing component and a heat source when elevated temperature sensing is required. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of the elongated gas sensor element.

Apparatus and process for sensing target gas species in semiconductor processing systems

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Wolcott, CT, United States of America

James J Welch