International Business Machines Corporation

James J Rosenberg

Jerry M Woodall

Steven Lorenz Wright

Peter Daniel Kirchner

Thomas N Jackson

George D Pettit

This invention relates to an improved heterojunction FET. More specifically the invention is directed to a heterojunction FET device in which the contact to the semiconductor gate is ohmic in character. The gate and channel regions of the FET have the same barrier height relative to an intervening third layer of semiconductor and sandwich the third layer of undoped semiconductor. The resulting symmetry of the structure provides a threshold voltage which lies normally near zero volts and is controllable upwardly or downwardly by adding an n or p type dopant to the undoped third layer or region.

Double heterojunction FET with ohmic semiconductor gate and controllable

A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.

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Bronx, NY, United States of America

James J Rosenberg