Entegris, Inc.

Advanced Technology Materials, Inc.

James J Mayer

Joseph D Sweeney

Robert E Kaim

Richard S Ray

Tianniu Chen

Oleg Byl

Ying Tang

Sharad N Yedave

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Silicon implantation in substrates and provision of silicon precursor compositions therefor

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one ofSi,Si, andSi, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Enriched silicon precursor compositions and apparatus and processes for utilizing same

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Fischer, TX, United States of America

James J Mayer