Micron Technology Incorporated

Viratec Thin Films, Inc.

James J Hoffmann

Stephen J Kramer

Gundu M Sabde

Eric R Dickey

Erik J Bjornard

Michael James Joslyn

Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time. The work versus time plot is then integrated to determine an estimated work exerted at the pad/substrate interface. The planarizing process is terminated when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly according to a predetermined relationship between work and substrate assembly thickness.

Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies

An in-line sputtering system with rotating cylindrical magnetrons is fitted with a system of anodes having a large surface area. The surface area is equal to or greater than the surface area of the sputtering chambers' internal walls. The anodes may be grounded, allowed to float electrically, or connected to a separate bias power supply. The anode surfaces are protected from contamination by sputtered material or are designed so the electron collecting surface may be replaced during the sputtering process. The anodes may be equipped with a magnet array for improving electron collecting efficiency.

Anode structures for magnetron sputtering apparatus

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Boise, ID, United States of America

James J Hoffmann